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STGW40NC60KD

STGW40NC60KD
Mfr. #:
STGW40NC60KD
Produttore:
STMicroelectronics
Descrizione:
IGBT Transistors 40A - 600V Short circuit rugged IGBT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STGW40NC60KD Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
STGW40NC60KD maggiori informazioni STGW40NC60KD Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione massima dell'emettitore di gate:
20 V
Pd - Dissipazione di potenza:
250 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
STGW40NC60KD
Confezione:
Tubo
Corrente continua del collettore Ic Max:
70 A
Altezza:
20.15 mm
Lunghezza:
15.75 mm
Larghezza:
5.15 mm
Marca:
STMicroelectronics
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
600
sottocategoria:
IGBT
Unità di peso:
1.340411 oz
Tags
STGW40NC, STGW40N, STGW40, STGW4, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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40 A - 600 V - short circuit rugged IGBT
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247
***et
STMICROELECTRONICS STGW40NC60KD IGBTS
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40 A, 600 V, very fast IGBT with Ultrafast diode
***nell
IGBT, N 600V 40A TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
***p One Stop
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
IRG4PC50FPBF, IGBT Transistor, 70 A 600V, 3-Pin TO-247AC
***ure Electronics
IRG4PC50 Series 600 V 39 A N-Channel Fast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.6 V Current release time: 230 ns Power dissipation: 200 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time Max:130ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:280A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 308000mW 3-Pin(3+Tab) TO-247AC Tube
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IRGP35B60PDPBF Series 600 V 34 A N-Channel UltraFast IGBT - TO-247AC
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600V Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.85 V Current release time: 8 ns Power dissipation: 308 W
***ment14 APAC
IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:308W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-247AC; Power Dissipation Max:308W; Power Dissipation Pd:308W; Power Dissipation Pd:308W; Pulsed Current Icm:120A; Rise Time:6ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PC50SPBF Series 600 V 41 A N-Channel Standard Speed IGBT - TO-247AC
***ineon SCT
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***el Electronic
In a Tube of 25, Infineon IRG4PC50SPBF IGBT, 70 A 600 V, 3-Pin TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.36 V Current release time: 620 ns Power dissipation: 200 W
***nell
IGBT, 600V, 70A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:70A; Voltage, Vce Sat Max:1.36V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:140A; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:600ns; Time, Rise:30ns; Transistors, No. of:1
***icroelectronics
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Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 1.55V; Transistor Case Style: TO-247; No. of Pins
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
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***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***(Formerly Allied Electronics)
IGBT N-Channel 30A 600V TO-247
***ark
Igbt, Single, 600V, 60A, To-247-3; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2.1V; Power Dissipation Pd:200W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***DA Technology Co., Ltd.
Product Description Demo for Development.
Parte # Mfg. Descrizione Azione Prezzo
STGW40NC60KD
DISTI # V79:2366_17781904		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		200
  • 5000:$2.0410
  • 2500:$2.1000
  • 1000:$2.1740
  • 500:$2.5990
  • 250:$2.8600
  • 100:$3.0440
  • 10:$3.5430
  • 1:$4.6144
STGW40NC60KD
DISTI # V36:1790_06560768		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    STGW40NC60KD
    DISTI # 497-8441-5-ND    		STMicroelectronicsIGBT 600V 70A 250W TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		1226In Stock
    • 2520:$2.2344
    • 510:$2.7818
    • 120:$3.2678
    • 30:$3.7707
    • 10:$3.9880
    • 1:$4.4400
    STGW40NC60KD
    DISTI # 26113382    		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		200
    • 5000:$2.0410
    • 2500:$2.1000
    • 1000:$2.1740
    • 500:$2.5990
    • 250:$2.8600
    • 100:$3.0440
    • 10:$3.5430
    • 4:$4.1950
    STGW40NC60KD
    DISTI # STGW40NC60KD    		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW40NC60KD)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€1.7900
    • 100:€1.9900
    • 500:€1.9900
    • 50:€2.0900
    • 25:€2.1900
    • 10:€2.2900
    • 1:€2.4900
    STGW40NC60KD
    DISTI # STGW40NC60KD    		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW40NC60KD)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 3600:$1.9900
    • 6000:$1.9900
    • 2400:$2.0900
    • 1200:$2.1900
    • 600:$2.2900
    STGW40NC60KD
    DISTI # 09R5998    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$2.0800
    • 250:$2.1400
    • 100:$2.5600
    • 50:$2.9600
    • 25:$3.1500
    • 10:$3.6000
    • 1:$4.1500
    STGW40NC60KD
    DISTI # 511-STGW40NC60KD    		STMicroelectronicsIGBT Transistors 40A - 600V Short circuit rugged IGBT
    RoHS: Compliant    		226
    • 1:$4.2300
    • 10:$3.6000
    • 100:$3.1200
    • 250:$2.9600
    • 500:$2.6500
    • 1000:$2.2400
    • 2500:$2.1300
    STGW40NC60KDSTMicroelectronics 300
      STGW40NC60KDSTMicroelectronicsInsulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247
      RoHS: Compliant      		Europe - 285
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        Disponibilità
        Azione:
        826
        Su ordine:
        2809
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        Il prezzo attuale di STGW40NC60KD è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
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        est. Prezzo
        1
        4,23 USD
        4,23 USD
        10
        3,60 USD
        36,00 USD
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        3,12 USD
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        250
        2,96 USD
        740,00 USD
        500
        2,65 USD
        1 325,00 USD
        1000
        2,24 USD
        2 240,00 USD
        2500
        2,13 USD
        5 325,00 USD
        5000
        2,05 USD
        10 250,00 USD
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