IPB026N06NATMA1

Mfr. #:: IPB026N06NATMA1
Produttore:: Infineon Technologies
Descrizione:: Darlington Transistors MOSFET N-Ch 60V 100A D2PAK-2
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPB026N06NATMA1 Scheda dati
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Maggiori informazioni:: IPB026N06NATMA1 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Serie: IPB026N06

Confezione: Bobina

Alias parziali: IPB026N06N IPB026N06NXT SP000962142

Unità di peso: 0.139332 oz

Stile di montaggio: SMD/SMT

Nome depositato: OptiMOS

Pacchetto-Custodia: TO-263-3

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Separare

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 136 W

Massima temperatura di esercizio: + 175 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 8 ns

Ora di alzarsi: 15 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 100 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 2.8 V

Rds-On-Drain-Source-Resistenza: 2.6 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 30 ns

Tempo di ritardo all'accensione tipico: 17 ns

Qg-Gate-Carica: 56 nC

Transconduttanza diretta-Min: 160 S

Tags: IPB02, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB026N06NATMA1 Descrizione

***Components: In a Pack of 5, N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK Infineon IPB026N06NATMA1

***et Europe: Trans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R

***ark: MOSFET, N-CH, 60V, 100A, TO-263-3

***ical: Trans MOSFET N-CH 60V 100A

***i-Key: MOSFET N-CH 60V 25A TO263-3

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:136W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CANALE N 60V 100A TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

IPB026N06NATMA1 Maggiori informazioni

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

20-60V OptiMOS Power MOSFETs: Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPB026N06NATMA1 DISTI # V72:2272_06382953	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	360	250:$1.4926 100:$1.4962 25:$1.7836 10:$1.7896 1:$2.0280
IPB026N06NATMA1 DISTI # IPB026N06NATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 25A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	957In Stock	500:$1.6853 100:$2.1669 10:$2.6970 1:$2.9900
IPB026N06NATMA1 DISTI # IPB026N06NATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 25A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	957In Stock	500:$1.6853 100:$2.1669 10:$2.6970 1:$2.9900
IPB026N06NATMA1 DISTI # IPB026N06NATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 25A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.3558
IPB026N06NATMA1 DISTI # 31066474	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	450	12:$1.3607
IPB026N06NATMA1 DISTI # 27065521	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	360	250:$1.4926 100:$1.4962 25:$1.7836 10:$1.7896 7:$2.0280
IPB026N06NATMA1 DISTI # IPB026N06NATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB026N06NATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.9789 2000:$0.9439 4000:$0.9099 6000:$0.8789 10000:$0.8639
IPB026N06NATMA1 DISTI # SP000962142	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R (Alt: SP000962142) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.2459 2000:€0.9679 4000:€0.8989 6000:€0.8709 10000:€0.8369
IPB026N06NATMA1 DISTI # 50Y2002	Infineon Technologies AG	MOSFET Transistor, N Channel, 100 A, 60 V, 0.0023 ohm, 10 V, 2.8 V RoHS Compliant: Yes	657	1:$2.5100 10:$2.1300 25:$1.9900 50:$1.8400 100:$1.7000 250:$1.6000 500:$1.4900
IPB026N06NATMA1 DISTI # 726-IPB026N06NATMA1	Infineon Technologies AG	MOSFET N-Ch 60V 100A D2PAK-2 RoHS: Compliant	864	1:$2.5100 10:$2.1300 100:$1.7000 500:$1.4900 1000:$1.2400
IPB026N06N DISTI # 726-IPB026N06N	Infineon Technologies AG	MOSFET N-Ch 60V 100A D2PAK-2 RoHS: Compliant	482	1:$2.5100 10:$2.1300 100:$1.7000 500:$1.4900 1000:$1.2400
IPB026N06NATMA1 DISTI # 9062883P	Infineon Technologies AG	MOSFET N-CHANNEL 60V 100A OPTIMOS TO263, RL	975	15:£1.5480 50:£1.3860 100:£1.2240 250:£1.2000
IPB026N06NATMA1 DISTI # IPB026N06NATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,100A,136W,PG-TO263-3	28	1:$1.9215 5:$1.6504 25:$1.3299 100:$1.1594 1000:$1.0741
IPB026N06NATMA1 DISTI # C1S322000654323	Infineon Technologies AG	MOSFETs RoHS: Compliant	360	250:$1.4926 100:$1.4962 25:$1.7836 10:$1.7896
IPB026N06NATMA1 DISTI # 2480797	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, TO-263-3 RoHS: Compliant	657	1:£1.9600 10:£1.4000 100:£1.2300 250:£1.2100 500:£1.0400
IPB026N06NATMA1 DISTI # 2480797	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, TO-263-3 RoHS: Compliant	657	1:$3.9700 10:$3.3800 100:$2.6900 500:$2.3700 1000:$1.9700
IPB026N06NATMA1 DISTI # 2480797RL	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, TO-263-3 RoHS: Compliant	0	1:$3.9700 10:$3.3800 100:$2.6900 500:$2.3700 1000:$1.9700

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IPB026N06NATMA1 OMO.#: OMO-IPB026N06NATMA1	MOSFET N-Ch 60V 100A D2PAK-2
	Mfr.#: IPB026N06N OMO.#: OMO-IPB026N06N	MOSFET N-Ch 60V 100A D2PAK-2
	Mfr.#: IPB026N06N OMO.#: OMO-IPB026N06N-1190	MOSFET N-Ch 60V 100A D2PAK-2
	Mfr.#: IPB026N06NATMA1 OMO.#: OMO-IPB026N06NATMA1-INFINEON-TECHNOLOGIES	Darlington Transistors MOSFET N-Ch 60V 100A D2PAK-2

Disponibilità

Azione:: Available
Su ordine:: 2000
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Il prezzo attuale di IPB026N06NATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,30 USD~~; ~~1,30 USD~~

10: ~~1,23 USD~~; ~~12,31 USD~~

100: ~~1,17 USD~~; ~~116,63 USD~~

500: ~~1,10 USD~~; ~~550,75 USD~~

1000: ~~1,04 USD~~; ~~1 036,70 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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IPB026N06NATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes