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BSC123N10LS G

BSC123N10LS G
Mfr. #:
BSC123N10LS G
Produttore:
Infineon Technologies
Descrizione:
RF Bipolar Transistors MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC123N10LS G Scheda dati
Consegna:
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ECAD Model:
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BSC123N10LS G maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Single
Serie
OptiMOS 2
Confezione
Bobina
Alias ​​parziali
BSC123N10LSGATMA1 BSC123N10LSGXT SP000379612
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
TDSON-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
114 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
7 ns
Ora di alzarsi
25 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
10.6 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Resistenza
12.3 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
41 ns
Tempo di ritardo all'accensione tipico
18 ns
Modalità canale
Aumento
Tags
BSC123N10LSG, BSC123N1, BSC123, BSC12, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descrizione Azione Prezzo
BSC123N10LSGATMA1
DISTI # BSC123N10LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 71A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11954In Stock
  • 1000:$0.9241
  • 500:$1.1153
  • 100:$1.4340
  • 10:$1.7840
  • 1:$1.9800
BSC123N10LSGATMA1
DISTI # BSC123N10LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 71A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11954In Stock
  • 1000:$0.9241
  • 500:$1.1153
  • 100:$1.4340
  • 10:$1.7840
  • 1:$1.9800
BSC123N10LSGATMA1
DISTI # BSC123N10LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 71A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.8044
BSC123N10LSGATMA1
DISTI # BSC123N10LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 10.6A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC123N10LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.6479
  • 10000:$0.6249
  • 20000:$0.6019
  • 30000:$0.5819
  • 50000:$0.5709
BSC123N10LSGATMA1
DISTI # SP000379612		Infineon Technologies AGTrans MOSFET N-CH 100V 10.6A 8-Pin TDSON T/R (Alt: SP000379612)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.8859
  • 10000:€0.7249
  • 20000:€0.6649
  • 30000:€0.6139
  • 50000:€0.5699
BSC123N10LSGATMA1
DISTI # 52R3478		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 7A, PG-TSDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:71A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.85V RoHS Compliant: Yes0
  • 1000:$0.8980
  • 500:$1.0800
  • 100:$1.2400
  • 10:$1.5500
  • 1:$1.8300
BSC123N10LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 10.6A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		550
  • 1000:$0.7100
  • 500:$0.7500
  • 100:$0.7800
  • 25:$0.8100
  • 1:$0.8700
BSC123N10LS G
DISTI # 726-BSC123N10LSG		Infineon Technologies AGMOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
RoHS: Compliant		2794
  • 1:$1.6600
  • 10:$1.4100
  • 100:$1.1300
  • 500:$0.9850
  • 1000:$0.8160
BSC123N10LSGATMA1
DISTI # 726-BSC123N10LSGATMA		Infineon Technologies AGMOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
RoHS: Compliant		0
  • 1:$1.6600
  • 10:$1.4100
  • 100:$1.1300
  • 500:$0.9850
  • 1000:$0.8160
BSC123N10LSGATMA1
DISTI # 7545305P		Infineon Technologies AGMOSFET N-CH 100V 10.6A OPTIMOS2 TDSON8, RL2462
  • 20:£1.2150
  • 40:£1.1600
  • 100:£1.1150
  • 300:£1.0750
BSC123N10LSGInfineon Technologies AG10.6 A, 100 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET71
  • 51:$1.1250
  • 14:$1.5000
  • 1:$2.2500
BSC123N10LSGInfineon Technologies AG 100
    BSC123N10LSGATMA1
    DISTI # 1775470    		Infineon Technologies AGMOSFET, N CH, 71A, 100V, PG-TDSON-8
    RoHS: Compliant    		3564
    • 500:£0.7660
    • 250:£0.8230
    • 100:£0.8790
    • 25:£1.0900
    • 5:£1.1900
    BSC123N10LSGInfineon Technologies AG100V,12.3m,71A,N-Channel Power MOSFET100
    • 1:$1.3100
    • 100:$1.0900
    • 500:$0.9700
    • 1000:$0.9400
    BSC123N10LS G
    DISTI # C1S322000087178    		Infineon Technologies AGTrans MOSFET N-CH 100V 10.6A 8-Pin TDSON EP
    RoHS: Compliant    		197
    • 100:$0.7370
    BSC123N10LSGATMA1
    DISTI # 1775470    		Infineon Technologies AGMOSFET, N CH, 71A, 100V, PG-TDSON-8
    RoHS: Compliant    		3265
    • 1000:$1.3000
    • 5000:$1.3000
    • 500:$1.5600
    • 100:$1.7900
    • 10:$2.2300
    • 1:$2.6300
    Immagine Parte # Descrizione
    BSC123N08NS3 G

    Mfr.#: BSC123N08NS3 G

    OMO.#: OMO-BSC123N08NS3-G

    		 MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
    BSC123N10LS G

    Mfr.#: BSC123N10LS G

    OMO.#: OMO-BSC123N10LS-G

    		 MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
    BSC123N10LSGATMA1

    Mfr.#: BSC123N10LSGATMA1

    OMO.#: OMO-BSC123N10LSGATMA1

    		 MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
    BSC123N08N

    Mfr.#: BSC123N08N

    OMO.#: OMO-BSC123N08N-1190

    		 Nuovo e originale
    BSC123N08NS3 G

    Mfr.#: BSC123N08NS3 G

    OMO.#: OMO-BSC123N08NS3-G-1190

    		 Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP
    BSC123N08NS3GATMA1

    Mfr.#: BSC123N08NS3GATMA1

    OMO.#: OMO-BSC123N08NS3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 80V 55A TDSON-8
    BSC123N08NS3GATMA1 , TDZ

    Mfr.#: BSC123N08NS3GATMA1 , TDZ

    OMO.#: OMO-BSC123N08NS3GATMA1-TDZ-1190

    		 Nuovo e originale
    BSC123N10LS

    Mfr.#: BSC123N10LS

    OMO.#: OMO-BSC123N10LS-1190

    		 Nuovo e originale
    BSC123N10LS G

    Mfr.#: BSC123N10LS G

    OMO.#: OMO-BSC123N10LS-G-1190

    		 Nuovo e originale
    BSC123N10LS G

    Mfr.#: BSC123N10LS G

    OMO.#: OMO-BSC123N10LS-G-317

    		 RF Bipolar Transistors MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
    Disponibilità
    Azione:
    Available
    Su ordine:
    5500
    Inserisci la quantità:
    Il prezzo attuale di BSC123N10LS G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,10 USD
    1,10 USD
    10
    1,04 USD
    10,43 USD
    100
    0,99 USD
    98,82 USD
    500
    0,93 USD
    466,65 USD
    1000
    0,88 USD
    878,40 USD
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