AOTS40B65H1

Mfr. #:: AOTS40B65H1
Produttore:: Alpha & Omega Semiconductor Inc
Descrizione:: IGBT 650V 40A TO220
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: AOTS40B65H1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: AOTS40B65H1 Datasheet AOTS40B65H1 Datasheet (P4-P6)AOTS40B65H1 Datasheet (P7)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: Alpha & Omega Semiconductor Inc.

categoria di prodotto: IGBT - Singolo

Serie: Alfa IGBT

Confezione: Tubo

Pacchetto-Custodia: TO-220-3

Tipo di ingresso: Standard

Tipo di montaggio: Foro passante

Pacchetto-dispositivo-fornitore: TO-220

Potenza-Max: 300W

Reverse-Tempo di ripristino-trr: -

Corrente-Collettore-Ic-Max: 80A

Tensione-Collettore-Emettitore-Ripartizione-Max: 650V

Tipo IGBT: -

Corrente-Collettore-Impulsato-Icm: 120A

Vce-su-Max-Vge-Ic: 2.4V @ 15V, 40A

Energia di commutazione: 1.27mJ (on), 460μJ (off)

Gate-Charge: 63nC

Td-on-off-25°C: 41ns/130ns

Condizione di test: 400V, 40A, 7.5 Ohm, 15V

Tags: AOTS, AOT

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AOTS40B65H1 Descrizione

***ha & Omega Semiconductor SCT: 650V, 40A Alpha IGBT (TM), TO220-3, RoHS

***i-Key: IGBT 650V 40A TO220

***ical: Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(3+Tab) TO-220 Tube

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 30 A high speed

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB

***ical: Trans IGBT Chip N-CH 600V 80A 62500mW 3-Pin(3+Tab) TO-220AB Tube

***icroelectronics: Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

***r Electronics: Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ark: IGBT, SINGLE, 600V, 80A, TO-220AB; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:283W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

***ical: Trans IGBT Chip N-CH 650V 30A 31000mW 3-Pin(3+Tab) TO-220FP Tube

***icroelectronics: Trench gate field-stop IGBT M series, 650 V 15 A low loss

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB

***ical: Trans IGBT Chip N-CH 650V 10.8A 31200mW 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: IKA08N65H5 Series 650 V 10.8 A Through Hole DuoPack IGBT - TO-220-3

***ineon SCT: 650 V, 8 A IGBT with anti-parallel diode in TO-220 package, PG-TO220-3, RoHS

***nell: IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor ; Available until stocks are exhausted

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***ical: Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube

***ark: Igbt Single Transistor, 8 A, 1.6 V, 31.2 W, 650 V, To-220, 3 Rohs Compliant: Yes

***ineon SCT: High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS

***nell: IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***ical: Trans IGBT Chip N-CH 650V 30000mW 3-Pin(3+Tab) TO-220F Rail

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB

***rchild Semiconductor: Using innovative field stop IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for IPL (Intense Pulsed Light).

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
AOTS40B65H1 DISTI # 785-1774-ND	Alpha & Omega Semiconductor	IGBT 650V 40A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	532In Stock	5000:$1.0850 3000:$1.0986 1000:$1.1799 500:$1.4241 250:$1.6275 100:$1.8309 25:$2.0344 10:$2.2790 1:$2.5200

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: AOTS40B65H1

OMO.#: OMO-AOTS40B65H1-ALPHA-AND-OMEGA-SEMICONDUCTOR

IGBT 650V 40A TO220

Disponibilità

Azione:: Available
Su ordine:: 4000
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Il prezzo attuale di AOTS40B65H1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,63 USD~~; ~~1,63 USD~~

10: ~~1,55 USD~~; ~~15,46 USD~~

100: ~~1,46 USD~~; ~~146,48 USD~~

500: ~~1,38 USD~~; ~~691,70 USD~~

1000: ~~1,30 USD~~; ~~1 302,00 USD~~

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AOTS40B65H1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes