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STH310N10F7-2

STH310N10F7-2
Mfr. #:
STH310N10F7-2
Produttore:
STMicroelectronics
Descrizione:
MOSFET N-CH 100V 180A H2PAK-2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STH310N10F7-2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
STH310N10F7-2 maggiori informazioni STH310N10F7-2 Product Details
Attributo del prodotto
Valore attributo
Produttore
STMicroelectronics
categoria di prodotto
FET - Single
Serie
DeepGATE, StripFET VII
Confezione
Imballaggio alternativo Digi-ReelR
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Nome depositato
STRIPFET
Pacchetto-Custodia
TO-263-3, D2Pak (2 Leads + Tab) Variant
Tecnologia
si
Temperatura di esercizio
-55°C ~ 175°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
H2PAK
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
315W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
100V
Ingresso-Capacità-Ciss-Vds
12800pF @ 25V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
180A (Tc)
Rds-On-Max-Id-Vgs
2.5 mOhm @ 60A, 10V
Vgs-th-Max-Id
3.8V @ 250μA
Gate-Carica-Qg-Vgs
180nC @ 10V
Pd-Power-Dissipazione
315 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
40 ns
Ora di alzarsi
108 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
180 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3.8 V
Rds-On-Drain-Source-Resistenza
2.5 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
148 ns
Tempo di ritardo all'accensione tipico
62 ns
Qg-Gate-Carica
180 nC
Tags
STH310N, STH310, STH31, STH3, STH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
***ical
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R
***icroelectronics SCT
Power MOSFETs, 100V, 180A, H2PAK-2, Tape and Reel
***ark
Mosfet, N-Ch, 100V, 180A, H2Pak-2; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; On Resistance Rds(On):0.0019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
STripFET™ F7 Power MOSFETs
STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. The STripFET F7 feature high avalanche ruggedness.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descrizione Azione Prezzo
STH310N10F7-2
DISTI # 32015460		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		970
  • 500:$1.8487
  • 100:$1.8742
  • 50:$2.0145
  • 10:$2.4480
  • 8:$3.6338
STH310N10F7-2
DISTI # 497-13585-2-ND		STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 2000:$3.6036
  • 1000:$3.7422
STH310N10F7-2
DISTI # 497-13585-1-ND		STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$4.4255
  • 100:$5.2820
  • 10:$6.4240
  • 1:$7.1400
STH310N10F7-2
DISTI # 497-13585-6-ND		STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$4.4255
  • 100:$5.2820
  • 10:$6.4240
  • 1:$7.1400
STH310N10F7-2
DISTI # C1S730200783411		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		970
  • 500:$1.4500
  • 100:$1.4700
  • 50:$1.5800
  • 10:$1.9200
  • 1:$2.8500
STH310N10F7-2
DISTI # V36:1790_06560869		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		0
    STH310N10F7-2
    DISTI # V72:2272_17736640    		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R
    RoHS: Compliant    		0
      STH310N10F7-2
      DISTI # STH310N10F7-2      		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin H2PAK T/R (Alt: STH310N10F7-2)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel      		Europe - 4000
      • 1000:€2.3900
      • 2000:€2.2900
      • 4000:€2.1900
      • 6000:€2.0900
      • 10000:€1.8900
      STH310N10F7-2
      DISTI # STH310N10F7-2      		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin H2PAK T/R - Tape and Reel (Alt: STH310N10F7-2)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel      		Americas - 0
      • 1000:$3.6900
      • 2000:$3.5900
      • 4000:$3.3900
      • 6000:$3.1900
      • 10000:$3.1900
      STH310N10F7-2
      DISTI # 45AC7612      		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin H2PAK T/R - Bulk (Alt: 45AC7612)
      RoHS: Compliant
      Min Qty: 1
      Container: Bulk      		Americas - 0
      • 1:$6.4700
      • 10:$5.8800
      • 25:$5.6300
      • 50:$5.2900
      • 100:$4.9400
      • 250:$4.3100
      • 500:$4.0800
      STH310N10F7-2
      DISTI # 45AC7612      		STMicroelectronicsMOSFET, N-CH, 100V, 180A, H2PAK-2,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V RoHS Compliant: Yes257
      • 500:$3.9700
      • 250:$4.1900
      • 100:$4.8100
      • 50:$5.1400
      • 25:$5.4800
      • 10:$5.7200
      • 1:$6.2900
      STH310N10F7-2
      DISTI # 511-STH310N10F7-2      		STMicroelectronicsMOSFET N-CH 100V 2.1mOhm 180A STripFET VI
      RoHS: Compliant      		0
      • 1:$5.9900
      • 10:$5.4100
      • 25:$5.1600
      • 100:$4.4800
      • 250:$4.2800
      • 500:$3.9000
      • 1000:$3.4000
      STH310N10F7-2
      DISTI # 7863707P      		STMicroelectronicsMOSFET N-CHANNEL 100V 180A H2PAK, RL106
      • 1000:£2.4700
      • 500:£2.8300
      • 250:£3.1050
      • 50:£3.7450
      STH310N10F7-2
      DISTI # 2807201      		STMicroelectronicsMOSFET, N-CH, 100V, 180A, H2PAK-21010
      • 100:£4.1000
      • 10:£4.7300
      • 1:£6.0600
      STH310N10F7-2
      DISTI # 2807201      		STMicroelectronicsMOSFET, N-CH, 100V, 180A, H2PAK-2
      RoHS: Compliant      		1013
      • 100:$8.0100
      • 10:$9.7400
      • 1:$10.8200
      STH310N10F7-2
      DISTI # XSKDRABS0035265      		STMicroelectronics 
      RoHS: Compliant      		3000 in Stock0 on Order
      • 3000:$3.3120
      • 1000:$3.5400
      Immagine Parte # Descrizione
      STH310N10F7-2

      Mfr.#: STH310N10F7-2

      OMO.#: OMO-STH310N10F7-2

      		 MOSFET N-CH 100V 2.1mOhm 180A STripFET VI
      STH310N10F7-6

      Mfr.#: STH310N10F7-6

      OMO.#: OMO-STH310N10F7-6

      		 MOSFET N-Ch 100 V 2.1 mOhm 180 A STripFET
      STH310N10F7-2

      Mfr.#: STH310N10F7-2

      OMO.#: OMO-STH310N10F7-2-STMICROELECTRONICS

      		 MOSFET N-CH 100V 180A H2PAK-2
      STH310N10F7-2-CUT TAPE

      Mfr.#: STH310N10F7-2-CUT TAPE

      OMO.#: OMO-STH310N10F7-2-CUT-TAPE-1190

      		 Nuovo e originale
      STH310N10F7

      Mfr.#: STH310N10F7

      OMO.#: OMO-STH310N10F7-1190

      		 Nuovo e originale
      STH310N10F7-6

      Mfr.#: STH310N10F7-6

      OMO.#: OMO-STH310N10F7-6-STMICROELECTRONICS

      		 MOSFET N-CH 100V 180A H2PAK-2
      STH310N10F7-6 310N10F7

      Mfr.#: STH310N10F7-6 310N10F7

      OMO.#: OMO-STH310N10F7-6-310N10F7-1190

      		 Nuovo e originale
      STH310N10F72

      Mfr.#: STH310N10F72

      OMO.#: OMO-STH310N10F72-1190

      		 Nuovo e originale
      STH310S

      Mfr.#: STH310S

      OMO.#: OMO-STH310S-1190

      		 Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      1500
      Inserisci la quantità:
      Il prezzo attuale di STH310N10F7-2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      2,20 USD
      2,20 USD
      10
      2,09 USD
      20,95 USD
      100
      1,98 USD
      198,45 USD
      500
      1,87 USD
      937,15 USD
      1000
      1,76 USD
      1 764,00 USD
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