OMO ElectronicOMO Electronic
Expand menu
0 Carrello

STGW15H120F2

STGW15H120F2
Mfr. #:
STGW15H120F2
Produttore:
STMicroelectronics
Descrizione:
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STGW15H120F2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
STGW15H120F2 maggiori informazioni STGW15H120F2 Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2.1 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
30 A
Pd - Dissipazione di potenza:
259 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
STGW15H120F2
Confezione:
Tubo
Corrente continua del collettore Ic Max:
15 A
Marca:
STMicroelectronics
Corrente di dispersione gate-emettitore:
250 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
600
sottocategoria:
IGBT
Unità di peso:
1.340411 oz
Tags
STGW15, STGW1, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube
***i-Key
IGBT H-SERIES 1200V 15A TO-247
***ronik
IGBT 1200V 15A 2,1V TO247-3
***ark
Ptd High Voltage
IGBT H Series
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Parte # Mfg. Descrizione Azione Prezzo
STGW15H120F2
DISTI # 30607521		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		20
  • 6:$4.2713
STGW15H120F2
DISTI # 497-14713-5-ND		STMicroelectronicsIGBT H-SERIES 1200V 15A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$4.0187
  • 510:$4.5438
  • 120:$5.1475
  • 30:$5.8563
  • 1:$6.7300
STGW15H120F2
DISTI # C1S730200906164		STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		20
  • 1:$3.3500
STGW15H120F2
DISTI # STGW15H120F2		STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW15H120F2)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$3.6900
  • 1200:$3.4900
  • 2400:$3.3900
  • 3600:$3.1900
  • 6000:$3.0900
STGW15H120F2
DISTI # STGW15H120F2		STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube (Alt: STGW15H120F2)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€4.3900
  • 10:€3.9900
  • 25:€3.8900
  • 50:€3.6900
  • 100:€3.5900
  • 500:€3.3900
  • 1000:€3.1900
STGW15H120F2
DISTI # 511-STGW15H120F2		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
RoHS: Compliant		0
  • 600:$3.8700
  • 1200:$3.3700
Immagine Parte # Descrizione
STGW15M120DF3

Mfr.#: STGW15M120DF3

OMO.#: OMO-STGW15M120DF3

 IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
STGW15H120DF2

Mfr.#: STGW15H120DF2

OMO.#: OMO-STGW15H120DF2

 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
STGW15H120F2

Mfr.#: STGW15H120F2

OMO.#: OMO-STGW15H120F2

 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
STGW15S120DF3

Mfr.#: STGW15S120DF3

OMO.#: OMO-STGW15S120DF3

 IGBT Transistors IGBT & Power Bipolar
STGW15M120DF3

Mfr.#: STGW15M120DF3

OMO.#: OMO-STGW15M120DF3-STMICROELECTRONICS

 IGBT Transistors IGBT & Power Bipola
STGW15H120F2

Mfr.#: STGW15H120F2

OMO.#: OMO-STGW15H120F2-STMICROELECTRONICS

 IGBT Transistors IGBT & Power Bipola
STGW15H120DF2

Mfr.#: STGW15H120DF2

OMO.#: OMO-STGW15H120DF2-STMICROELECTRONICS

 IGBT H-SERIES 1200V 15A TO-247
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di STGW15H120F2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
600
3,87 USD
2 322,00 USD
1200
3,37 USD
4 044,00 USD
3000
3,25 USD
9 750,00 USD
Iniziare con
Prodotti più recenti
  • PWD13F60 High-Density Power Driver
    PWD13F60 High-Density Power Driver
    STMicroelectronics' PWD13F60 integrated power MOSFET full bridge with embedded gate drivers in a 13 mm x 10 mm outline.
  • Compare STGW15H120F2
    Compare STGW15H120F2
    STGW15H120DF2 vs STGW15H120F2 vs STGW15M120DF3
  • STSPIN32F0 Motor-Control System
    STSPIN32F0 Motor-Control System
    STMicroelectronics' STSPIN32F0 motor-control system-in-package combines the power and flexibility of a microcontroller-based drive with ease of use and space efficiency.
  • STripFET VI DeepGATE Series Power MOSFETs
    STripFET VI DeepGATE Series Power MOSFETs
    STMicroelectronics' 80 V MOSFETs with DeepGATE process integration result a more efficient and denser design in applications such as motor control and DC/DC converters.
  • ESDA8P30-1T2 TVS Diode
    ESDA8P30-1T2 TVS Diode
    STMicroelectronics' ESDA8P30-1T2 unidirectional, single-line TVS diode provides USB VBUS, power supply, and battery protection.
  • CLOUD-ST25TA02KB Evaluation Board
    CLOUD-ST25TA02KB Evaluation Board
    STMicroelectronics' CLOUD-ST25TA02KB evaluation board for the ST25TA02KB-P device can be configured for various uses such as indicating field detection.
More Newest Products
Top