IPB054N08N3 G

IPB054N08N3 G
Mfr. #:
IPB054N08N3 G
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB054N08N3 G Scheda dati
Consegna:
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ECAD Model:
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IPB054N08N3 G maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
OptiMOS 3
Confezione
Bobina
Alias ​​parziali
IPB054N08N3GATMA1 IPB054N08N3GXT SP000395166
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
150 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
10 ns
Ora di alzarsi
66 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
80 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Rds-On-Drain-Source-Resistenza
5.4 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
38 ns
Tempo di ritardo all'accensione tipico
18 ns
Modalità canale
Aumento
Tags
IPB054N08N3G, IPB054N08, IPB054, IPB05, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IPB054N08N3GATMA1
DISTI # IPB054N08N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 80V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3989In Stock
  • 500:$1.0657
  • 100:$1.3702
  • 10:$1.7050
  • 1:$1.8900
IPB054N08N3GATMA1
DISTI # IPB054N08N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 80V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3989In Stock
  • 500:$1.0657
  • 100:$1.3702
  • 10:$1.7050
  • 1:$1.8900
IPB054N08N3GATMA1
DISTI # IPB054N08N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 80V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
3000In Stock
  • 1000:$0.8573
IPB054N08N3 G
DISTI # IPB054N08N3 G
Infineon Technologies AGTrans MOSFET N-CH 80V 80A 3-Pin TO-263 T/R (Alt: IPB054N08N3 G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 0
  • 1000:$0.6143
  • 2000:$0.5972
  • 3000:$0.5811
  • 5000:$0.5658
  • 10000:$0.5584
  • 25000:$0.5513
  • 50000:$0.5443
IPB054N08N3GXT
DISTI # IPB054N08N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB054N08N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$0.6189
  • 2000:$0.5969
  • 4000:$0.5749
  • 6000:$0.5559
  • 10000:$0.5459
IPB054N08N3 G
DISTI # 726-IPB054N08N3G
Infineon Technologies AGMOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
RoHS: Compliant
270
  • 1:$1.5900
  • 10:$1.3500
  • 100:$1.0800
  • 500:$0.9410
  • 1000:$0.7800
IPB054N08N3GATMA1
DISTI # 726-IPB054N08N3GATMA
Infineon Technologies AGMOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
RoHS: Compliant
1033
  • 1:$1.5900
  • 10:$1.3500
  • 100:$1.0800
  • 500:$0.9410
  • 1000:$0.7800
IPB054N08N3GATMA1
DISTI # 8269178P
Infineon Technologies AGMOSFET N-CH 80A 80V OPTIMOS3 TO263, RL5990
  • 50:£0.9500
  • 250:£0.7990
  • 500:£0.7270
IPB054N08N3GInfineon Technologies AG 
RoHS: Compliant
Europe - 956
    IPB054N08N3GInfineon Technologies AG 820
      IPB054N08N3GATMA1
      DISTI # 2480800
      Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-3
      RoHS: Compliant
      0
      • 1:$2.5200
      • 10:$2.1400
      • 100:$1.7200
      IPB054N08N3GATMA1
      DISTI # 2480800RL
      Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-3
      RoHS: Compliant
      0
      • 1:$2.5200
      • 10:$2.1400
      • 100:$1.7200
      IPB054N08N3GATMA1
      DISTI # 2480800
      Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-3
      RoHS: Compliant
      0
      • 5:£1.0500
      • 25:£0.9500
      • 100:£0.8750
      • 250:£0.7990
      • 500:£0.7270
      Immagine Parte # Descrizione
      IPB054N06N3 G

      Mfr.#: IPB054N06N3 G

      OMO.#: OMO-IPB054N06N3-G

      MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3
      IPB054N08N3GATMA1

      Mfr.#: IPB054N08N3GATMA1

      OMO.#: OMO-IPB054N08N3GATMA1

      MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
      IPB054N06N3GATMA1-CUT TAPE

      Mfr.#: IPB054N06N3GATMA1-CUT TAPE

      OMO.#: OMO-IPB054N06N3GATMA1-CUT-TAPE-1190

      Nuovo e originale
      IPB054N08N3GATMA1-CUT TAPE

      Mfr.#: IPB054N08N3GATMA1-CUT TAPE

      OMO.#: OMO-IPB054N08N3GATMA1-CUT-TAPE-1190

      Nuovo e originale
      IPB054N06N3GATMA1 , 2SD1

      Mfr.#: IPB054N06N3GATMA1 , 2SD1

      OMO.#: OMO-IPB054N06N3GATMA1-2SD1-1190

      Nuovo e originale
      IPB054N08N3

      Mfr.#: IPB054N08N3

      OMO.#: OMO-IPB054N08N3-1190

      Nuovo e originale
      IPB054N08N3G

      Mfr.#: IPB054N08N3G

      OMO.#: OMO-IPB054N08N3G-1190

      MOSFET, N-CH, 80V, 80A, TO-263-3
      IPB054N08N3G,054N08N

      Mfr.#: IPB054N08N3G,054N08N

      OMO.#: OMO-IPB054N08N3G-054N08N-1190

      Nuovo e originale
      IPB054N08N3GS

      Mfr.#: IPB054N08N3GS

      OMO.#: OMO-IPB054N08N3GS-1190

      Nuovo e originale
      IPB054N08N3 G

      Mfr.#: IPB054N08N3 G

      OMO.#: OMO-IPB054N08N3-G-126

      IGBT Transistors MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
      Disponibilità
      Azione:
      Available
      Su ordine:
      1000
      Inserisci la quantità:
      Il prezzo attuale di IPB054N08N3 G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,82 USD
      0,82 USD
      10
      0,78 USD
      7,76 USD
      100
      0,73 USD
      73,48 USD
      500
      0,69 USD
      347,00 USD
      1000
      0,65 USD
      653,20 USD
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