IPB015N08N5ATMA1

IPB015N08N5ATMA1
Mfr. #:
IPB015N08N5ATMA1
Produttore:
Infineon Technologies
Descrizione:
RF Bipolar Transistors MOSFET N-Ch 80V 180A D2PAK-2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB015N08N5ATMA1 Scheda dati
Consegna:
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IPB015N08N5ATMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Alias ​​parziali
IPB015N08N5 SP001226034
Unità di peso
0.056438 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-263-7
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
375 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
28 ns
Ora di alzarsi
32 ns
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuo-Scarico-Corrente
180 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2.2 V
Rds-On-Drain-Source-Resistenza
1.8 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
83 ns
Tempo di ritardo all'accensione tipico
33 ns
Qg-Gate-Carica
178 nC
Transconduttanza diretta-Min
123 S
Modalità canale
Aumento
Tags
IPB015N08, IPB015, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
***ure Electronics
IPB015N08N5 Series 80 V 180 A OptiMOS™ 5 Power Transistor - PG-TO-263-7
***ark
Mosfet, N-Ch, 80V, 180A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0011Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Parte # Mfg. Descrizione Azione Prezzo
IPB015N08N5ATMA1
DISTI # IPB015N08N5ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$3.5163
IPB015N08N5ATMA1
DISTI # IPB015N08N5ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$4.2944
  • 100:$5.3033
  • 10:$6.4670
  • 1:$7.2400
IPB015N08N5ATMA1
DISTI # IPB015N08N5ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$4.2944
  • 100:$5.3033
  • 10:$6.4670
  • 1:$7.2400
IPB015N08N5ATMA1
DISTI # IPB015N08N5ATMA1
Infineon Technologies AGTrans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB015N08N5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$3.1900
  • 2000:$3.0900
  • 4000:$2.9900
  • 6000:$2.8900
  • 10000:$2.8900
IPB015N08N5ATMA1
DISTI # SP001226034
Infineon Technologies AGTrans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: SP001226034)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€3.0900
  • 2000:€2.8900
  • 4000:€2.7900
  • 6000:€2.5900
  • 10000:€2.3900
IPB015N08N5ATMA1
DISTI # 13AC9020
Infineon Technologies AGMOSFET, N-CH, 80V, 180A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
  • 500:$3.8000
  • 250:$4.2300
  • 100:$4.4600
  • 50:$4.6900
  • 25:$4.9100
  • 10:$5.1400
  • 1:$6.0500
IPB015N08N5ATMA1
DISTI # 726-IPB015N08N5ATMA1
Infineon Technologies AGMOSFET N-Ch 80V 180A D2PAK-2
RoHS: Compliant
44
  • 1:$6.0500
  • 10:$5.1400
  • 100:$4.4600
  • 250:$4.2300
  • 500:$3.8000
  • 1000:$3.2000
IPB015N08N5ATMA1
DISTI # 2725833
Infineon Technologies AGMOSFET, N-CH, 80V, 180A, TO-263
RoHS: Compliant
0
  • 500:$6.8500
  • 100:$8.4600
  • 10:$10.3100
  • 1:$11.5400
IPB015N08N5ATMA1
DISTI # 2725833
Infineon Technologies AGMOSFET, N-CH, 80V, 180A, TO-263
RoHS: Compliant
0
  • 500:£2.9000
  • 250:£3.2300
  • 100:£3.4000
  • 10:£3.9300
  • 1:£5.1000
Immagine Parte # Descrizione
IPB015N04N G

Mfr.#: IPB015N04N G

OMO.#: OMO-IPB015N04N-G

MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
IPB015N04NGATMA1

Mfr.#: IPB015N04NGATMA1

OMO.#: OMO-IPB015N04NGATMA1

MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
IPB015N04LGATMA1

Mfr.#: IPB015N04LGATMA1

OMO.#: OMO-IPB015N04LGATMA1

MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
IPB015N04L

Mfr.#: IPB015N04L

OMO.#: OMO-IPB015N04L-1190

Nuovo e originale
IPB015N04LGATMA1

Mfr.#: IPB015N04LGATMA1

OMO.#: OMO-IPB015N04LGATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 120A TO263-3
IPB015N04NG

Mfr.#: IPB015N04NG

OMO.#: OMO-IPB015N04NG-1190

Trans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R (Alt: SP000391522)
IPB015N04NGATMA1

Mfr.#: IPB015N04NGATMA1

OMO.#: OMO-IPB015N04NGATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 120A TO263-3
IPB015N08N5

Mfr.#: IPB015N08N5

OMO.#: OMO-IPB015N08N5-1190

N-CH 80V 180A 1,5mOhm TO263-7
IPB015N08N5 015N08N5

Mfr.#: IPB015N08N5 015N08N5

OMO.#: OMO-IPB015N08N5-015N08N5-1190

Nuovo e originale
IPB015N08N5ATMA1

Mfr.#: IPB015N08N5ATMA1

OMO.#: OMO-IPB015N08N5ATMA1-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET N-Ch 80V 180A D2PAK-2
Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di IPB015N08N5ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
4,32 USD
4,32 USD
10
4,11 USD
41,08 USD
100
3,89 USD
389,19 USD
500
3,68 USD
1 837,85 USD
1000
3,46 USD
3 459,50 USD
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