IRFB31N20DPBF

Mfr. #:: IRFB31N20DPBF
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-CH 200V 31A TO-220AB
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IRFB31N20DPBF Scheda dati
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Attributo del prodotto
Valore attributo

Produttore: IR

categoria di prodotto: FET - Single

Confezione: Tubo

Unità di peso: 0.211644 oz

Stile di montaggio: Foro passante

Pacchetto-Custodia: TO-220-3

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Separare

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 200 W

Massima temperatura di esercizio: + 175 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 10 ns

Ora di alzarsi: 38 ns

Vgs-Gate-Source-Voltage: 30 V

Id-Continuo-Scarico-Corrente: 31 A

Vds-Drain-Source-Breakdown-Voltage: 200 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 5.5 V

Rds-On-Drain-Source-Resistenza: 82 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 26 ns

Tempo di ritardo all'accensione tipico: 16 ns

Qg-Gate-Carica: 70 nC

Transconduttanza diretta-Min: 17 S

Modalità canale: Aumento

Tags: IRFB31N20D, IRFB31, IRFB3, IRFB, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFB31N20DPBF Descrizione

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V

***ure Electronics: Single N-Channel 200 V 0.082 Ohm 107 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop Japan: Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

***ment14 APAC: MOSFET, N, 200V, 31A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:124A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

IRFB31N20DPBF Maggiori informazioni

200-250V HEXFET® Power MOSFETs: Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IRFB31N20DPBF DISTI # V99:2348_13889968	Infineon Technologies AG	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube	885	10000:$0.8597 5000:$0.8913 2000:$0.9237 1000:$0.9777 500:$1.1767 100:$1.2728 10:$1.6040 1:$1.8505
IRFB31N20DPBF DISTI # V36:1790_13889968	Infineon Technologies AG	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube	793	10000:$0.8597 5000:$0.8913 2000:$0.9237 1000:$0.9777 500:$1.1767 100:$1.2728 10:$1.6040 1:$1.8505
IRFB31N20DPBF DISTI # IRFB31N20DPBF-ND	Infineon Technologies AG	MOSFET N-CH 200V 31A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	637In Stock	1000:$1.1226 500:$1.3548 100:$1.7419 10:$2.1680 1:$2.4000
IRFB31N20DPBF DISTI # 30612859	Infineon Technologies AG	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube	1000	200:$1.2164 100:$1.2750 50:$1.3642 10:$1.7723 8:$3.4297
IRFB31N20DPBF DISTI # 30276997	Infineon Technologies AG	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube	885	500:$1.1767 100:$1.2728 10:$1.6040 9:$1.8505
IRFB31N20DPBF DISTI # 31045708	Infineon Technologies AG	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube	793	500:$1.1767 100:$1.2728 10:$1.6040 9:$1.8505
IRFB31N20DPBF DISTI # 7932783	Infineon Technologies AG	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube	340	13:$0.7955
IRFB31N20DPBF DISTI # IRFB31N20DPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB31N20DPBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 1052	1:$1.3089 10:$1.1799 25:$1.1769 50:$1.1739 100:$1.0139 500:$1.0119 1000:$0.9989
IRFB31N20DPBF DISTI # SP001560192	Infineon Technologies AG	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB (Alt: SP001560192) RoHS: Compliant Min Qty: 1	Europe - 19500	1:€1.7829 10:€1.5159 25:€1.5119 50:€1.5089 100:€1.2049 500:€1.0579 1000:€0.8809
IRFB31N20DPBF DISTI # IRFB31N20DPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB (Alt: IRFB31N20DPBF) RoHS: Compliant Min Qty: 1000	Asia - 0
IRFB31N20DPBF DISTI # 57J2554	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 31A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.082ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,MSL:- RoHS Compliant: Yes	69	1:$1.9500 10:$1.6500 100:$1.3200 500:$1.1600 1000:$0.9610 2500:$0.8930 5000:$0.8590
IRFB31N20DPBF. DISTI # 27AC6762	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 31A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.082ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,MSL:- RoHS Compliant: Yes	0	1:$2.1200 10:$1.8000 100:$1.4400 500:$1.2400 1000:$1.0300 2500:$0.9510 5000:$0.9150
IRFB31N20DPBF DISTI # 70017529	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.082Ohm,ID 31A,TO-220AB,PD 200W,VGS +/-30V RoHS: Compliant	0	5:$4.2500 10:$3.7500 100:$3.2700 500:$2.8400 1000:$2.5000
IRFB31N20DPBF DISTI # 942-IRFB31N20DPBF	Infineon Technologies AG	MOSFET MOSFT 200V 31A 82mOhm 70nC RoHS: Compliant	1809	1:$2.0800 10:$1.7600 100:$1.4100 500:$1.2400 1000:$1.0300 2000:$0.9510 5000:$0.9150
IRFB31N20DPBF	Infineon Technologies AG	Single N-Channel 200 V 0.082 Ohm 107 nC HEXFET Power Mosfet - TO-220-3 RoHS: Compliant	947Tube	10:$1.0800 100:$0.9750 500:$0.8300
IRFB31N20DPBF DISTI # 8273947	Infineon Technologies AG	MOSFET N-CH 200V 31A HEXFET SMPS TO220AB, PK	145	5:£1.6180 50:£1.4220 100:£1.2460 250:£1.1640 500:£1.1000
IRFB31N20DPBF DISTI # 8655793	Infineon Technologies AG	MOSFET N-CH 200V 31A HEXFET SMPS TO220AB, TU	65	5:£1.6180 100:£1.4220 250:£1.2460 500:£1.1640 1000:£1.1000
IRFB31N20DPBF DISTI # 8273947P	Infineon Technologies AG	MOSFET N-CH 200V 31A HEXFET SMPS TO220AB, TU	785	50:£1.4220 100:£1.2460 250:£1.1640 500:£1.1000
IRFB31N20DPBF	International Rectifier	MOSFET Transistor, N-Channel, TO-220AB	22	11:$2.1900 2:$2.6280 1:$3.5040
IRFB31N20DPBF DISTI # IRFB31N20DPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,200V,31A,200W,TO220AB	3	1:$1.6500 3:$1.4900 10:$1.2400 100:$1.0700
IRFB31N20DPBF	International Rectifier	RoHS: Compliant	Europe - 73
IRFB31N20DPBF DISTI # IRFB31N20DPBF	Infineon Technologies AG	N-Ch 200V 31A 200W 0,082R TO220AB RoHS: Compliant	400	10:€1.1400 50:€0.9045 200:€0.8245 500:€0.7940
IRFB31N20DPBF DISTI # 8648751	Infineon Technologies AG	MOSFET, N, 200V, 31A, TO-220 RoHS: Compliant	1008	1:$3.2900 10:$2.7900 100:$2.2300 500:$1.9700 1000:$1.6300 2000:$1.5100 5000:$1.4700
IRFB31N20DPBF DISTI # XSKDRABS0006780	Infineon Technologies AG	RoHS: Compliant	13680	1000:$1.4300 13680:$1.3300
IRFB31N20DPBF DISTI # XSLY00000000905	Infineon Technologies AG	TO-220AB RoHS: Compliant	26280	1000:$0.7143 26280:$0.6667
IRFB31N20DPBF DISTI # 8648751	Infineon Technologies AG	MOSFET, N, 200V, 31A, TO-220 RoHS: Compliant	1042	1:£1.6500 10:£1.3300 100:£1.0900 250:£1.0200 500:£0.9540
IRFB31N20DPBF DISTI # C1S322000631094	Infineon Technologies AG	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1000	500:$0.9280 200:$0.9540 100:$1.0000 50:$1.0700 10:$1.3900 1:$2.6900
IRFB31N20DPBF DISTI # C1S322000488270	Infineon Technologies AG	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	945	500:$1.1767 100:$1.2728 10:$1.6040

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IRFB31N20DPBF OMO.#: OMO-IRFB31N20DPBF	MOSFET MOSFT 200V 31A 82mOhm 70nC
	Mfr.#: IRFB31N20D OMO.#: OMO-IRFB31N20D-1190	MOSFET Transistor, N-Channel, TO-220AB
	Mfr.#: IRFB31N20DPBF OMO.#: OMO-IRFB31N20DPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 200V 31A TO-220AB
	Mfr.#: IRFB31N20DPBF,IRFB31N20D OMO.#: OMO-IRFB31N20DPBF-IRFB31N20D-1190	Nuovo e originale
	Mfr.#: IRFB31N20PBF OMO.#: OMO-IRFB31N20PBF-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 3500
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Il prezzo attuale di IRFB31N20DPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,00 USD~~; ~~1,00 USD~~

10: ~~0,95 USD~~; ~~9,50 USD~~

100: ~~0,90 USD~~; ~~90,00 USD~~

500: ~~0,85 USD~~; ~~425,00 USD~~

1000: ~~0,80 USD~~; ~~800,00 USD~~

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IRFB31N20DPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes