BSC040N08NS5ATMA1

BSC040N08NS5ATMA1
Mfr. #:
BSC040N08NS5ATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 80V 100A 8TDSON
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC040N08NS5ATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
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ECAD Model:
Maggiori informazioni:
BSC040N08NS5ATMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Infineo
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Alias ​​parziali
BSC040N08NS5 SP001132452
Unità di peso
0.017870 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TDSON-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
104 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
6 ns
Ora di alzarsi
8 ns
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuo-Scarico-Corrente
100 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2.2 V
Rds-On-Drain-Source-Resistenza
5.7 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
25 ns
Tempo di ritardo all'accensione tipico
14 ns
Qg-Gate-Carica
43 nC
Transconduttanza diretta-Min
45 S
Modalità canale
Aumento
Tags
BSC040N0, BSC040, BSC04, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 80 V 4 mOhm 54 nC OptiMOS™ Power Mosfet - PG-TDSON-8
***ical
Trans MOSFET N-CH 80V 100A Automotive 8-Pin TDSON EP T/R
***ark
Mosfet, N-Ch, 80V, 100A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descrizione Azione Prezzo
BSC040N08NS5ATMA1
DISTI # BSC040N08NS5ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 80V 100A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.9295
BSC040N08NS5ATMA1
DISTI # BSC040N08NS5ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 80V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$1.0678
  • 500:$1.2888
  • 100:$1.6570
  • 10:$2.0620
  • 1:$2.2800
BSC040N08NS5ATMA1
DISTI # BSC040N08NS5ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 80V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$1.0678
  • 500:$1.2888
  • 100:$1.6570
  • 10:$2.0620
  • 1:$2.2800
BSC040N08NS5ATMA1
DISTI # BSC040N08NS5ATMA1
Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC040N08NS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.7489
  • 10000:$0.7219
  • 20000:$0.6959
  • 30000:$0.6719
  • 50000:$0.6599
BSC040N08NS5ATMA1
DISTI # SP001132452
Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin TDSON T/R (Alt: SP001132452)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€0.9809
  • 10000:€0.8029
  • 20000:€0.7359
  • 30000:€0.6789
  • 50000:€0.6309
BSC040N08NS5ATMA1
DISTI # 12AC9443
Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes5333
  • 1:$1.9200
  • 10:$1.6300
  • 25:$1.5200
  • 50:$1.4100
  • 100:$1.3000
  • 250:$1.2200
  • 500:$1.1400
  • 1000:$0.9430
BSC040N08NS5ATMA1
DISTI # 726-BSC040N08NS5ATMA
Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8
RoHS: Compliant
0
  • 1:$1.9200
  • 10:$1.6300
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$0.9430
  • 2500:$0.8780
  • 5000:$0.8460
BSC040N08NS5ATMA1
DISTI # 2709860
Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON
RoHS: Compliant
5333
  • 5:£1.5700
  • 25:£1.4200
  • 100:£1.2600
BSC040N08NS5ATMA1
DISTI # 2709860
Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON
RoHS: Compliant
5333
  • 1:$3.6400
  • 10:$3.2900
  • 100:$2.6500
Immagine Parte # Descrizione
BSC040N08NS5ATMA1

Mfr.#: BSC040N08NS5ATMA1

OMO.#: OMO-BSC040N08NS5ATMA1

MOSFET N-Ch 80V 100A TDSON-8
BSC040N08NS5

Mfr.#: BSC040N08NS5

OMO.#: OMO-BSC040N08NS5-1190

Nuovo e originale
BSC040N08NS5 , TDA7449 ,

Mfr.#: BSC040N08NS5 , TDA7449 ,

OMO.#: OMO-BSC040N08NS5-TDA7449--1190

Nuovo e originale
BSC040N08NS5ATMA1

Mfr.#: BSC040N08NS5ATMA1

OMO.#: OMO-BSC040N08NS5ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 80V 100A 8TDSON
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di BSC040N08NS5ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,99 USD
0,99 USD
10
0,94 USD
9,40 USD
100
0,89 USD
89,09 USD
500
0,84 USD
420,70 USD
1000
0,79 USD
791,90 USD
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