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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| RFD3055SM DISTI # RFD3055SM-ND | ON Semiconductor | MOSFET N-CH 60V 12A DPAK RoHS: Compliant Min Qty: 1800 Container: Tube | Limited Supply - Call | |
| RFD3055SM9A DISTI # RFD3055SM9A-ND | ON Semiconductor | MOSFET N-CH 60V 12A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| RFD3055SM9A DISTI # RFD3055SM9A | ON Semiconductor | Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) TO-252AA T/R - Bulk (Alt: RFD3055SM9A) RoHS: Compliant Min Qty: 736 Container: Bulk | Americas - 0 |
|
| RFD3055SM9A DISTI # 512-RFD3055SM9A | ON Semiconductor | MOSFET Power MOSFET RoHS: Compliant | 0 | |
| RFD3055SM DISTI # 512-RFD3055SM | ON Semiconductor | MOSFET Power MOSFET N-Ch 6V/12a/.15 Ohm RoHS: Compliant | 0 | |
| RFD3055SM9A136 DISTI # 512-RFD3055SM9A136 | ON Semiconductor | MOSFET RoHS: Not compliant | 0 | |
| RFD3055SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 40 |
|
| RFD3055SM9AS2479 | Harris Semiconductor | RoHS: Not Compliant | 2500 |
|
| RFD3055SM96 | Harris Semiconductor | 1440 |
| |
| RFD3055SM | Fairchild Semiconductor Corporation | 769 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: RFD3055 OMO.#: OMO-RFD3055-ON-SEMICONDUCTOR |
MOSFET N-CH 60V 12A IPAK |
|
Mfr.#: RFD3055LE,F3055L OMO.#: OMO-RFD3055LE-F3055L-1190 |
Nuovo e originale |
|
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Mfr.#: RFD3055LEMS OMO.#: OMO-RFD3055LEMS-1190 |
Nuovo e originale |
|
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Mfr.#: RFD3055RLESM OMO.#: OMO-RFD3055RLESM-1190 |
Nuovo e originale |
|
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Mfr.#: RFD3055RLESM9A OMO.#: OMO-RFD3055RLESM9A-1190 |
Nuovo e originale |
|
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Mfr.#: RFD3055S OMO.#: OMO-RFD3055S-1190 |
Nuovo e originale |
|
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Mfr.#: RFD3055SM9A136 OMO.#: OMO-RFD3055SM9A136-1190 |
Nuovo e originale |
|
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Mfr.#: RFD3055SM9G OMO.#: OMO-RFD3055SM9G-1190 |
Nuovo e originale |
|
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Mfr.#: RFD30N03LSM OMO.#: OMO-RFD30N03LSM-1190 |
Nuovo e originale |
|
|
Mfr.#: RFD3N08L OMO.#: OMO-RFD3N08L-1190 |
Power Field-Effect Transistor, 3A I(D), 80V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |