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GS8160Z18DGT-250I

GS8160Z18DGT-250I
Mfr. #:
GS8160Z18DGT-250I
Produttore:
GSI Technology
Descrizione:
SRAM 2.5 or 3.3V 1M x 18 18M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS8160Z18DGT-250I Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS8160Z18DGT-250I maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologia GSI
Categoria di prodotto:
SRAM
RoHS:
Y
Dimensione della memoria:
18 Mbit
Organizzazione:
1 M x 18
Orario di accesso:
5.5 ns
Frequenza massima di clock:
250 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
3.6 V
Tensione di alimentazione - Min:
2.3 V
Corrente di alimentazione - Max:
230 mA, 250 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TQFP-100
Confezione:
Vassoio
Tipo di memoria:
SDR
Serie:
GS8160Z18DGT
Tipo:
Conduttura/Flusso NBT
Marca:
Tecnologia GSI
Sensibile all'umidità:
sì
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
36
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
NBT SRAM
Tags
GS8160Z18DGT-25, GS8160Z18DGT-2, GS8160Z18D, GS8160Z1, GS8160Z, GS8160, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 5.5ns/2.5ns
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
Immagine Parte # Descrizione
MBB02070C1204FCT00

Mfr.#: MBB02070C1204FCT00

OMO.#: OMO-MBB02070C1204FCT00

 Thin Film Resistors - Through Hole .6w 1.2Mohms 1%
MBB02070C1204FCT00

Mfr.#: MBB02070C1204FCT00

OMO.#: OMO-MBB02070C1204FCT00-VISHAY

 Thin Film Resistors - Through Hole .6w 1.2Mohms 1%
Disponibilità
Azione:
Available
Su ordine:
1986
Inserisci la quantità:
Il prezzo attuale di GS8160Z18DGT-250I è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
15,46 USD
15,46 USD
25
14,36 USD
359,00 USD
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