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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SIS890DN-T1-GE3 DISTI # V72:2272_07434473 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 262 |
|
| SIS890DN-T1-GE3 DISTI # V36:1790_07434473 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 0 | |
| SIS890DN-T1-GE3 DISTI # SIS890DN-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 100V 30A 1212-8 Min Qty: 1 Container: Cut Tape (CT) | 8695In Stock |
|
| SIS890DN-T1-GE3 DISTI # SIS890DN-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 100V 30A 1212-8 Min Qty: 1 Container: Digi-Reel® | 8695In Stock |
|
| SIS890DN-T1-GE3 DISTI # SIS890DN-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 30A 1212-8 Min Qty: 3000 Container: Tape & Reel (TR) | 3000In Stock |
|
| SIS890DN-T1-GE3 DISTI # 32404372 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 262 |
|
| SIS890DN-T1-GE3 DISTI # SIS890DN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SIS890DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 3000 |
|
| SIS890DN-T1-GE3 DISTI # SIS890DN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R (Alt: SIS890DN-T1-GE3) Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SIS890DN-T1-GE3 DISTI # 70AC6484 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R - Product that comes on tape, but is not reeled (Alt: 70AC6484) RoHS: Compliant Min Qty: 1 Container: Ammo Pack | Americas - 0 |
|
| SIS890DN-T1-GE3 DISTI # 70AC6484 | Vishay Intertechnologies | MOSFET, N-CH, 100V, 30A, 150DEG C, 52W,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0195ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes RoHS: Compliant | 1910 |
|
| SIS890DN-T1-GE3. DISTI # 30AC0125 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0195ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power Dissipation Pd:52W,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SIS890DN-T1-GE3 DISTI # 78-SIS890DN-T1-GE3 | Vishay Intertechnologies | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 14569 |
|
| SIS890DN-T1-GE3 | Vishay Intertechnologies | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | Americas - |
|
| SIS890DN-T1-GE3 DISTI # 2283693 | Vishay Intertechnologies | MOSFET, N-CH, 100V, PPAK-1212 RoHS: Compliant | 17134 |
|
| SIS890DN-T1-GE3 DISTI # 2283693RL | Vishay Intertechnologies | MOSFET, N-CH, 100V, PPAK-1212 RoHS: Compliant | 0 |
|
| SIS890DN-T1-GE3 DISTI # 2283693 | Vishay Intertechnologies | MOSFET, N-CH, 100V, PPAK-1212 RoHS: Compliant | 16455 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
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Mfr.#: SIS894DN OMO.#: OMO-SIS894DN-1190 |
Nuovo e originale |
|
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Mfr.#: SIS894DN-T1-E3 OMO.#: OMO-SIS894DN-T1-E3-1190 |
Nuovo e originale |
|
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Mfr.#: SIS894DN-T1-GE3 OMO.#: OMO-SIS894DN-T1-GE3-1190 |
Nuovo e originale |