T1G4012036-FS

T1G4012036-FS
Mfr. #:
T1G4012036-FS
Produttore:
Qorvo
Descrizione:
RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
T1G4012036-FS Scheda dati
Consegna:
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ECAD Model:
Maggiori informazioni:
T1G4012036-FS maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
TriQuint (Qorvo)
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
T1G
Confezione
Vassoio
Alias ​​parziali
1096026
Stile di montaggio
SMD/SMT
Tecnologia
GaN SiC
Tipo a transistor
HEMT
Guadagno
18.4 dB
Pd-Power-Dissipazione
117 W
Frequenza operativa
3.3 GHz
Id-Continuo-Scarico-Corrente
12 A
Vds-Drain-Source-Breakdown-Voltage
36 V
Polarità del transistor
Canale N
Tensione massima-Drain-Gate
- 2.9 V
Tags
T1G4012036-F, T1G401, T1G4, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descrizione Azione Prezzo
T1G4012036-FS
DISTI # 772-T1G4012036-FS
QorvoRF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
RoHS: Compliant
0
  • 25:$316.7800
Immagine Parte # Descrizione
T1G4012036-FL

Mfr.#: T1G4012036-FL

OMO.#: OMO-T1G4012036-FL

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS

Mfr.#: T1G4012036-FS

OMO.#: OMO-T1G4012036-FS

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FL

Mfr.#: T1G4012036-FL

OMO.#: OMO-T1G4012036-FL-318

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS

Mfr.#: T1G4012036-FS

OMO.#: OMO-T1G4012036-FS-318

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS-EVB1

Mfr.#: T1G4012036-FS-EVB1

OMO.#: OMO-T1G4012036-FS-EVB1-1190

Nuovo e originale
T1G4012036-XCC-1-FS

Mfr.#: T1G4012036-XCC-1-FS

OMO.#: OMO-T1G4012036-XCC-1-FS-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di T1G4012036-FS è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
475,17 USD
475,17 USD
10
451,41 USD
4 514,12 USD
100
427,65 USD
42 765,30 USD
500
403,89 USD
201 947,25 USD
1000
380,14 USD
380 136,00 USD
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