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2SA1832-Y,LF

2SA1832-Y,LF
Mfr. #:
2SA1832-Y,LF
Produttore:
Toshiba
Descrizione:
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
2SA1832-Y,LF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2SA1832-Y,LF Datasheet
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Toshiba
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-426-3
Polarità del transistor:
PNP
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
- 50 V
Collettore-tensione di base VCBO:
- 50 V
Emettitore-tensione di base VEBO:
- 5 V
Tensione di saturazione collettore-emettitore:
- 100 mV
Corrente massima del collettore CC:
- 150 mA
Guadagno larghezza di banda prodotto fT:
80 MHz
Temperatura massima di esercizio:
+ 125 C
Serie:
2SA1832
Guadagno di corrente CC hFE Max:
400 at - 2 mA, - 6 V
Confezione:
Bobina
Marca:
Toshiba
Guadagno base/collettore DC hfe min:
70 at - 2 mA, - 6 V
Pd - Dissipazione di potenza:
100 mW
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
3000
sottocategoria:
transistor
Unità di peso:
0.000085 oz
Tags
2SA1832-Y, 2SA1832, 2SA183, 2SA18, 2SA1, 2SA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans GP BJT PNP 50V 0.15A 3-Pin SSM Embossed T/R
***
TRANS SSM PLN
***ical
Trans GP BJT NPN 50V 0.15A 320mW 3-Pin SOT-23
***el Electronic
SMCJ Series 38.9 V 1.5 kW Surface Mount Uni-Directional TVS Diode - DO-214AB
***enic
30nA 50V 320mW 150mA 290@2mA,5V 100MHz 170mV@100mA,5mA NPN +150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
***or
X34 PB-F SOT-23 TRANSISTOR FOR L
***ical
Trans GP BJT NPN 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PC4617 - NPN general-purpose transistor
***ment14 APAC
TRANSISTOR NPN 50V 0.15A SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:180; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:180; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
***ical
Trans GP BJT PNP 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PA1774 - PNP general-purpose transistor
*** Americas
PNP transistor in a SOT416 (SC-75) plastic package
***ical
Trans GP BJT NPN 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PC4617 - NPN general-purpose transistor
***ment14 APAC
TRANSISTOR NPN 50V 0.15A SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:120; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:120; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
***et
Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini Embossed T/R
***enic
50V 150mW 150mA 70@2mA,6V 80MHz 100mV@100mA,10mA PNP +125¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
***
TRANS S-MINI PLN
***ical
Trans GP BJT NPN 50V 0.15A 200mW Automotive 3-Pin USM T/R
***
TRANS PLN PD=100MWF=80MHZ
Parte # Mfg. Descrizione Azione Prezzo
2SA1832-Y,LF
DISTI # V72:2272_13896934		Toshiba America Electronic ComponentsTrans GP BJT PNP 50V 0.15A T/R
RoHS: Compliant		1918
  • 1000:$0.0357
  • 500:$0.0523
  • 250:$0.0529
  • 100:$0.0535
  • 25:$0.1293
  • 10:$0.1307
  • 1:$0.2090
2SA1832-Y,LF
DISTI # V36:1790_13896934		Toshiba America Electronic ComponentsTrans GP BJT PNP 50V 0.15A T/R
RoHS: Compliant		0
  • 1500000:$0.0182
  • 300000:$0.0236
  • 30000:$0.0344
  • 3000:$0.0362
2SA1832-Y,LF
DISTI # 2SA1832-YLFCT-ND		Toshiba America Electronic ComponentsTRANS PNP 50V 0.15A SSM
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    2SA1832-Y,LF
    DISTI # 2SA1832-YLFDKR-ND    		Toshiba America Electronic ComponentsTRANS PNP 50V 0.15A SSM
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      2SA1832-Y,LF
      DISTI # 2SA1832-YLFTR-ND      		Toshiba America Electronic ComponentsTRANS PNP 50V 0.15A SSM
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.0362
      2SA1832-Y,LF(T
      DISTI # 33366504      		Toshiba America Electronic Components02800
      • 2000:$0.0532
      • 500:$0.0560
      • 378:$0.0590
      2SA1832-Y,LF
      DISTI # 30276426      		Toshiba America Electronic ComponentsTrans GP BJT PNP 50V 0.15A T/R
      RoHS: Compliant      		1918
      • 1000:$0.0357
      • 500:$0.0523
      • 334:$0.0529
      2SA1832-Y,LF
      DISTI # 30599463      		Toshiba America Electronic ComponentsTrans GP BJT PNP 50V 0.15A T/R
      RoHS: Compliant      		890
      • 1000:$0.0454
      • 500:$0.0570
      • 371:$0.0602
      2SA1832-Y,LF
      DISTI # 2SA1832-Y,LF      		Toshiba America Electronic ComponentsTrans GP BJT PNP 50V 0.15A 3-Pin SSM Embossed T/R - Tape and Reel (Alt: 2SA1832-Y,LF)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
        2SA1832-Y,LF
        DISTI # 757-2SA1832YLF        		Toshiba America Electronic ComponentsBipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
        RoHS: Compliant        		9274
        • 1:$0.2200
        • 10:$0.1390
        • 100:$0.0580
        • 1000:$0.0400
        • 3000:$0.0300
        • 9000:$0.0260
        • 24000:$0.0240
        • 45000:$0.0230
        • 99000:$0.0200
        2SA1832-YLFToshiba America Electronic ComponentsBipolar Transistors - BJTSSM PLN (LF) TRANSISTOR
        RoHS: Compliant        		Americas -
          2SA1832-Y,LFToshiba America Electronic ComponentsBipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
          RoHS: Compliant          		Americas -
            2SA1832-Y,LF
            DISTI # C1S751201031910            		Toshiba America Electronic ComponentsGP BJT
            Min Qty: 50            		890
            • 500:$0.0447
            • 100:$0.0472
            • 50:$0.0540
            2SA1832-Y,LF(T
            DISTI # C1S751201196022            		Toshiba America Electronic ComponentsGP BJT
            RoHS: Compliant
            Min Qty: 50            		2800
            • 2000:$0.0417
            • 500:$0.0439
            • 100:$0.0463
            • 50:$0.0530
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            OMO.#: OMO-C1005X7S1A225K050BC-TDK

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            Disponibilità
            Azione:
            Available
            Su ordine:
            1992
            Inserisci la quantità:
            Il prezzo attuale di 2SA1832-Y,LF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
            Prezzo di riferimento (USD)
            Quantità
            Prezzo unitario
            est. Prezzo
            1
            0,22 USD
            0,22 USD
            10
            0,14 USD
            1,39 USD
            100
            0,06 USD
            5,80 USD
            1000
            0,04 USD
            40,00 USD
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