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FDD044AN03L

FDD044AN03L
Mfr. #:
FDD044AN03L
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 30V N-Channel PowerTrench
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDD044AN03L Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDD044AN03L DatasheetFDD044AN03L Datasheet (P4-P6)FDD044AN03L Datasheet (P7-P9)FDD044AN03L Datasheet (P10-P11)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
35 A
Rds On - Resistenza Drain-Source:
3.9 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
160 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Altezza:
2.39 mm
Lunghezza:
6.73 mm
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET
Larghezza:
6.22 mm
Marca:
ON Semiconductor / Fairchild
Tempo di caduta:
63 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
154 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
42 ns
Tempo di ritardo di accensione tipico:
20 ns
Unità di peso:
0.139332 oz
Tags
FDD0, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
N-Channel 30V 21A (Ta), 35A (Tc) 160W (Tc) Surface Mount TO-252AA - Bulk
***i-Key Marketplace
MOSFET N-CH 30V 21A/35A TO252AA
*** Services
CoC and 2-years warranty / RFQ for pricing
***ser
MOSFETs 30V N-Channel PowerTrench
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:35A; On Resistance, Rds(on):3.9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252AA ;RoHS Compliant: Yes
***emi
N-Channel PowerTrench® SyncFET™ 30V, 42A, 3mΩ
***r Electronics
Power Field-Effect Transistor, 113A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ical
Trans MOSFET N-CH 30V 24.3A 8-Pin PowerPAK SO EP T/R
***ure Electronics
N-CH POWERPAK SO-8 BWL 20V 4.7MOHM@10V- LEAD(PB) AND HALOGEN FREE
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET,N CH,30V,40A,POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:24.3A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 4.0mΩ
***ment14 APAC
N CHANNEL MOSFET, 25V, 35A TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Source Voltage Vds:25V; On Resistance
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.
***(Formerly Allied Electronics)
IRLR7807ZTRPBF N-channel MOSFET Transistor; 43 A; 30 V; 3+Tab-Pin DPAK
***ure Electronics
Single N-Channel 30V 13.8 mOhm 7 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***nell
MOSFET, N-CH, 30V, 43A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 43A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Po
***roFlash
Trans MOSFET N-CH 30V 13.1A Automotive 3-Pin(2+Tab) DPAK T/R
***ark
Mosfet, N-Ch, 30V, 43A, To-252 Rohs Compliant: Yes
***ure Electronics
N-Channel 30V 13.1A (Ta), 43A (Tc) 1.6W (Ta) Surface Mount TO-252-3
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Parte # Mfg. Descrizione Azione Prezzo
FDD044AN03L
DISTI # FDD044AN03L-ND		ON SemiconductorMOSFET N-CH 30V 35A D-PAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDD044AN03L
    DISTI # 512-FDD044AN03L    		ON SemiconductorMOSFET 30V N-Channel PowerTrench
    RoHS: Compliant    		0
      FDD044AN03LFairchild Semiconductor CorporationPower Field-Effect Transistor, 21A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant      		4060
      • 1000:$0.9000
      • 500:$0.9400
      • 100:$0.9800
      • 25:$1.0200
      • 1:$1.1000
      Immagine Parte # Descrizione
      FDD044AN03L

      Mfr.#: FDD044AN03L

      OMO.#: OMO-FDD044AN03L

      		 MOSFET 30V N-Channel PowerTrench
      FDD044AN03L

      Mfr.#: FDD044AN03L

      OMO.#: OMO-FDD044AN03L-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V 35A D-PAK
      Disponibilità
      Azione:
      Available
      Su ordine:
      1000
      Inserisci la quantità:
      Il prezzo attuale di FDD044AN03L è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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