IKW75N65EH5XKSA1

IKW75N65EH5XKSA1
Mfr. #:
IKW75N65EH5XKSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IKW75N65EH5XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IKW75N65EH5XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.65 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
90 A
Pd - Dissipazione di potenza:
395 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
TRENCHSTOP 5 H5
Confezione:
Tubo
Altezza:
20.7 mm
Lunghezza:
15.87 mm
Larghezza:
5.31 mm
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
240
sottocategoria:
IGBT
Nome depositato:
TRENCHSTOP
Parte # Alias:
IKW75N65EH5 SP001257948
Tags
IKW75N65EH, IKW75N65, IKW75N, IKW7, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***o
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    KZ

    Order did not come

    2019-02-22
    J***l
    J***l
    CZ

    ok

    2019-03-18
***ical
Trans IGBT Chip N-CH 650V 90A 395000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 90A 3-Pin TO-247 Tube
***an P&S
650V,90A,IGBT with Anti-Parallel Diode
***i-Key
IGBT TRENCH 650V 90A TO247-3
***ronik
IGBT 650V 75A 1,65V TO247-3
***ark
Igbt, Single, 650V, 90A, To-247; Dc Collector Current:90A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 90A, TO-247; DC Collector Current:90A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, SINGOLO, 650V, 90A, TO-247; Corrente di Collettore CC:90A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:395W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Home Appliance Solutions
Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Parte # Mfg. Descrizione Azione Prezzo
IKW75N65EH5XKSA1
DISTI # V99:2348_06377026
Infineon Technologies AGTrans IGBT Chip N-CH 650V 90A 395000mW 3-Pin(3+Tab) TO-247 Tube112
  • 100:$4.9460
  • 25:$5.7510
  • 10:$6.0830
  • 1:$7.4591
IKW75N65EH5XKSA1
DISTI # IKW75N65EH5XKSA1-ND
Infineon Technologies AGIGBT TRENCH 650V 90A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
240In Stock
  • 720:$4.6678
  • 240:$5.3605
  • 25:$6.1736
  • 10:$6.4750
  • 1:$7.1700
IKW75N65EH5XKSA1
DISTI # 31933332
Infineon Technologies AGTrans IGBT Chip N-CH 650V 90A 395000mW 3-Pin(3+Tab) TO-247 Tube112
  • 100:$4.9460
  • 25:$5.7510
  • 10:$6.0830
  • 2:$7.4591
IKW75N65EH5XKSA1
DISTI # 33637562
Infineon Technologies AGTrans IGBT Chip N-CH 650V 90A 395000mW 3-Pin(3+Tab) TO-247 Tube13
  • 3:$3.7420
IKW75N65EH5XKSA1
DISTI # IKW75N65EH5XKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 650V 90A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW75N65EH5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
    IKW75N65EH5XKSA1
    DISTI # 12AC9678
    Infineon Technologies AGIGBT, SINGLE, 650V, 90A, TO-247,DC Collector Current:90A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:395W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes721
    • 500:$4.4800
    • 250:$4.9200
    • 100:$5.1500
    • 50:$5.5400
    • 25:$5.9400
    • 10:$6.2200
    • 1:$6.8900
    IKW75N65EH5XKSA1
    DISTI # 726-IKW75N65EH5XKSA1
    Infineon Technologies AGIGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
    RoHS: Compliant
    7
    • 1:$6.8200
    • 10:$6.1600
    • 25:$5.8800
    • 100:$5.1000
    • 250:$4.8700
    • 500:$4.4400
    IKW75N65EH5XKSA1
    DISTI # 2709961
    Infineon Technologies AGIGBT, SINGLE, 650V, 90A, TO-247961
    • 500:£3.3500
    • 250:£3.6800
    • 100:£3.8500
    • 10:£4.4400
    • 1:£5.1600
    IKW75N65EH5XKSA1
    DISTI # 2709961
    Infineon Technologies AGIGBT, SINGLE, 650V, 90A, TO-247
    RoHS: Compliant
    961
    • 1200:$6.2200
    • 720:$7.1300
    • 240:$8.1900
    • 10:$9.8900
    • 1:$10.9500
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    IGBT Transistors High speed hard switching 600 V, 90 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost
    IKFW75N60ETXKSA1

    Mfr.#: IKFW75N60ETXKSA1

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    IGBT Transistors Infineon's 600 V, 50 A hard-switching TRENCHSTOP IGBT3 copacked with full-rated free-wheeling diode in a TO247 advanced isolation package.
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    IKW50N65EH5XKSA1

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    OMO.#: OMO-IKW50N65EH5XKSA1

    IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
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    Mfr.#: FFSH1665A

    OMO.#: OMO-FFSH1665A

    Schottky Diodes & Rectifiers 650V 16A SIC SBD
    IXGH72N60A3

    Mfr.#: IXGH72N60A3

    OMO.#: OMO-IXGH72N60A3

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    Mfr.#: IXGH60N60C3

    OMO.#: OMO-IXGH60N60C3

    IGBT Transistors GenX3 600V IGBT
    IKA10N65ET6XKSA2

    Mfr.#: IKA10N65ET6XKSA2

    OMO.#: OMO-IKA10N65ET6XKSA2-INFINEON-TECHNOLOGIES

    IGBT 650V 15A TO220-3
    Disponibilità
    Azione:
    461
    Su ordine:
    2444
    Inserisci la quantità:
    Il prezzo attuale di IKW75N65EH5XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    6,82 USD
    6,82 USD
    10
    6,16 USD
    61,60 USD
    25
    5,88 USD
    147,00 USD
    100
    5,10 USD
    510,00 USD
    250
    4,87 USD
    1 217,50 USD
    500
    4,44 USD
    2 220,00 USD
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