BSZ065N03LSATMA1

BSZ065N03LSATMA1
Mfr. #:
BSZ065N03LSATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 30V 12A TSDSON-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSZ065N03LSATMA1 Scheda dati
Consegna:
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Pagamento:
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ECAD Model:
Maggiori informazioni:
BSZ065N03LSATMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
BSZ065N03
Confezione
Bobina
Alias ​​parziali
BSZ065N03LS BSZ065N03LSXT SP000799084
Nome depositato
OptiMOS
Pacchetto-Custodia
TSDSON-8
Tecnologia
si
Numero di canali
1 Channel
Tipo a transistor
1 N-Channel
Polarità del transistor
Canale N
Tags
BSZ065N03LS, BSZ065N03, BSZ065, BSZ06, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 6.5 mOhm 10 nC OptiMOS™ Power Mosfet - TSDSON-8
*** Source Electronics
MOSFET N-CH 30V 12A TSDSON-8 / Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.0054Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: Yes
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Parte # Mfg. Descrizione Azione Prezzo
BSZ065N03LSATMA1
DISTI # V72:2272_06390880
Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
RoHS: Compliant
4900
  • 3000:$0.3086
  • 1000:$0.3187
  • 500:$0.3439
  • 250:$0.3821
  • 100:$0.3973
  • 25:$0.6008
  • 10:$0.6674
  • 1:$0.8010
BSZ065N03LSATMA1
DISTI # V36:1790_06390880
Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
RoHS: Compliant
0
  • 5000000:$0.2424
  • 2500000:$0.2426
  • 500000:$0.2567
  • 50000:$0.2797
  • 5000:$0.2835
BSZ065N03LSATMA1
DISTI # BSZ065N03LSATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 12A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
23886In Stock
  • 1000:$0.3461
  • 500:$0.4326
  • 100:$0.5472
  • 10:$0.7140
  • 1:$0.8100
BSZ065N03LSATMA1
DISTI # BSZ065N03LSATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 12A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
23886In Stock
  • 1000:$0.3461
  • 500:$0.4326
  • 100:$0.5472
  • 10:$0.7140
  • 1:$0.8100
BSZ065N03LSATMA1
DISTI # BSZ065N03LSATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 12A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
15000In Stock
  • 25000:$0.2660
  • 10000:$0.2730
  • 5000:$0.2835
BSZ065N03LSATMA1
DISTI # 33156665
Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
RoHS: Compliant
4900
  • 32:$0.8010
BSZ065N03LSATMA1
DISTI # BSZ065N03LSATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ065N03LSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.2029
  • 30000:$0.2059
  • 20000:$0.2139
  • 10000:$0.2219
  • 5000:$0.2299
BSZ065N03LSATMA1
DISTI # SP000799084
Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R (Alt: SP000799084)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 50000:€0.1889
  • 30000:€0.2039
  • 20000:€0.2209
  • 10000:€0.2409
  • 5000:€0.2939
BSZ065N03LSATMA1.
DISTI # 29AC2880
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:26W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 50000:$0.2030
  • 30000:$0.2060
  • 20000:$0.2140
  • 10000:$0.2220
  • 1:$0.2300
BSZ065N03LS
DISTI # 726-BSZ065N03LS
Infineon Technologies AGMOSFET N-Ch 30V 40A TDSON-8 OptiMOS
RoHS: Compliant
7098
  • 1:$0.7400
  • 10:$0.6200
  • 100:$0.4000
  • 1000:$0.3200
  • 5000:$0.2710
BSZ065N03LSATMA1
DISTI # 726-BSZ065N03LSATMA1
Infineon Technologies AGMOSFET N-Ch 30V 40A TDSON-8 OptiMOS
RoHS: Compliant
4700
  • 1:$0.7400
  • 10:$0.6200
  • 100:$0.4000
  • 1000:$0.3200
  • 5000:$0.2710
  • 10000:$0.2610
  • 25000:$0.2500
BSZ065N03LSATMA1
DISTI # 9064331P
Infineon Technologies AGMOSFET N-CHANNEL 30V 12A OPTIMOS TSDSON8, RL5360
  • 2500:£0.2300
  • 1000:£0.2400
  • 500:£0.2700
  • 100:£0.3000
BSZ065N03LSATMA1
DISTI # 2480783
Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TSDSON-8
RoHS: Compliant
0
  • 5000:$0.4170
  • 1000:$0.4920
  • 100:$0.6160
  • 10:$0.9530
  • 1:$1.1500
BSZ065N03LSATMA1
DISTI # 2480783RL
Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TSDSON-8
RoHS: Compliant
0
  • 5000:$0.4170
  • 1000:$0.4920
  • 100:$0.6160
  • 10:$0.9530
  • 1:$1.1500
Immagine Parte # Descrizione
BSZ065N06LS5ATMA1

Mfr.#: BSZ065N06LS5ATMA1

OMO.#: OMO-BSZ065N06LS5ATMA1

MOSFET MV POWER MOS
BSZ065N03LS

Mfr.#: BSZ065N03LS

OMO.#: OMO-BSZ065N03LS

MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
BSZ065N03LSATMA1

Mfr.#: BSZ065N03LSATMA1

OMO.#: OMO-BSZ065N03LSATMA1

MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
BSZ065N03L

Mfr.#: BSZ065N03L

OMO.#: OMO-BSZ065N03L-1190

Nuovo e originale
BSZ065N03LS

Mfr.#: BSZ065N03LS

OMO.#: OMO-BSZ065N03LS-1190

Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP (Alt: BSZ065N03LS)
BSZ065N03LSATMA1

Mfr.#: BSZ065N03LSATMA1

OMO.#: OMO-BSZ065N03LSATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 12A TSDSON-8
BSZ065N03LSG

Mfr.#: BSZ065N03LSG

OMO.#: OMO-BSZ065N03LSG-1190

Nuovo e originale
BSZ065N06LS5

Mfr.#: BSZ065N06LS5

OMO.#: OMO-BSZ065N06LS5-1190

N-CH 60V 40A 6,5mOhm TSDSON-8FL
BSZ065N06LS5ATMA1

Mfr.#: BSZ065N06LS5ATMA1

OMO.#: OMO-BSZ065N06LS5ATMA1-INFINEON-TECHNOLOGIES

MV POWER MOS
BSZ065N06LS5ATMA1-CUT TAPE

Mfr.#: BSZ065N06LS5ATMA1-CUT TAPE

OMO.#: OMO-BSZ065N06LS5ATMA1-CUT-TAPE-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
4500
Inserisci la quantità:
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