IXFX320N17T2

IXFX320N17T2
Mfr. #:
IXFX320N17T2
Produttore:
Littelfuse
Descrizione:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFX320N17T2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXFX320N17T2 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
PMIC - Gate Drivers
Tags
IXFX32, IXFX3, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 170V 320A 3-Pin(3+Tab) PLUS 247
***i-Key
MOSFET N-CH 170V 320A PLUS247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Parte # Mfg. Descrizione Azione Prezzo
IXFX320N17T2
DISTI # IXFX320N17T2-ND
IXYS CorporationMOSFET N-CH 170V 320A PLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 120:$18.3707
  • 30:$19.7660
  • 1:$23.2500
IXFX320N17T2
DISTI # 747-IXFX320N17T2
IXYS CorporationGate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant
0
  • 1:$24.3100
  • 5:$23.7600
  • 10:$22.4900
  • 25:$21.1400
  • 50:$19.5600
  • 100:$19.2100
  • 250:$16.3800
  • 500:$14.2700
Immagine Parte # Descrizione
IXFX320N17T2

Mfr.#: IXFX320N17T2

OMO.#: OMO-IXFX320N17T2

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Mfr.#: IXFX32N100P

OMO.#: OMO-IXFX32N100P

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Mfr.#: IXFX32N90P

OMO.#: OMO-IXFX32N90P

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Mfr.#: IXFX32N50,IXFH44N50P,IXF

OMO.#: OMO-IXFX32N50-IXFH44N50P-IXF-1190

Nuovo e originale
IXFX32N50,IXFX32N50Q

Mfr.#: IXFX32N50,IXFX32N50Q

OMO.#: OMO-IXFX32N50-IXFX32N50Q-1190

Nuovo e originale
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Mfr.#: IXFX32N48Q

OMO.#: OMO-IXFX32N48Q-IXYS-CORPORATION

MOSFET N-CH PLUS247
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Mfr.#: IXFX32N100P

OMO.#: OMO-IXFX32N100P-IXYS-CORPORATION

Darlington Transistors MOSFET 32 Amps 1000V 0.32 Rds
IXFX32N50Q

Mfr.#: IXFX32N50Q

OMO.#: OMO-IXFX32N50Q-IXYS-CORPORATION

MOSFET 32 Amps 500V 0.15 Rds
IXFX32N80Q3

Mfr.#: IXFX32N80Q3

OMO.#: OMO-IXFX32N80Q3-IXYS-CORPORATION

MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
IXFX32N90P

Mfr.#: IXFX32N90P

OMO.#: OMO-IXFX32N90P-IXYS-CORPORATION

IGBT Transistors MOSFET Polar HiPerFETs MOSFET w/Fast Diode
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di IXFX320N17T2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
21,40 USD
21,40 USD
10
20,33 USD
203,35 USD
100
19,26 USD
1 926,45 USD
500
18,19 USD
9 097,15 USD
1000
17,12 USD
17 124,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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