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FQP8N60C

FQP8N60C
Mfr. #:
FQP8N60C
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 600V N-Ch Q-FET advance C-Series
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FQP8N60C Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
7.5 A
Rds On - Resistenza Drain-Source:
1.2 Ohms
Vgs - Tensione Gate-Source:
30 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
147 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FQP8N60C
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
8.7 S
Tempo di caduta:
64.5 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
60.5 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
81 ns
Tempo di ritardo di accensione tipico:
16.5 ns
Parte # Alias:
FQP8N60C_NL
Unità di peso:
0.063493 oz
Tags
FQP8N60C, FQP8N60, FQP8N6, FQP8N, FQP8, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, TO-220
***ical
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail
***enic
600V 7.5A 147W 1.2´Î@10V3.75A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:147W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:1.2ohm; Package / Case:TO-220; Power Dissipation Pd:147W; Power Dissipation Pd:147W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parte # Mfg. Descrizione Azione Prezzo
FQP8N60C
DISTI # FQP8N60C-ND		ON SemiconductorMOSFET N-CH 600V 7.5A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		1000In Stock
  • 1000:$1.0170
  • 500:$1.2274
  • 100:$1.5781
  • 10:$1.9640
  • 1:$2.1700
FQP8N60C
DISTI # FQP8N60C		ON SemiconductorTrans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP8N60C)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.7599
  • 2000:$0.7559
  • 4000:$0.7459
  • 6000:$0.7359
  • 10000:$0.7179
FQP8N60C
DISTI # 97K0198		ON SemiconductorMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:7.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:147W,MSL:- , RoHS Compliant: Yes0
  • 1:$1.8700
  • 10:$1.5900
  • 100:$1.2700
  • 500:$1.1100
  • 1000:$0.9250
  • 2500:$0.8610
  • 5000:$0.8290
FQP8N60CFairchild Semiconductor CorporationPower Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		43736
  • 1000:$1.0600
  • 500:$1.1200
  • 100:$1.1600
  • 25:$1.2100
  • 1:$1.3000
FQP8N60C
DISTI # 512-FQP8N60C		ON SemiconductorMOSFET 600V N-Ch Q-FET advance C-Series
RoHS: Compliant		926
  • 1:$1.8700
  • 10:$1.5900
  • 100:$1.2700
  • 500:$1.1100
  • 1000:$0.9250
  • 2000:$0.8610
  • 5000:$0.8290
  • 10000:$0.7970
FQP8N60C_Q
DISTI # 512-FQP8N60C_Q		ON SemiconductorMOSFET 600V N-Ch Q-FET advance C-Series
RoHS: Not compliant		0
    FQP8N60C
    DISTI # 1095074    		ON SemiconductorMOSFET, N, TO-220
    RoHS: Compliant    		47
    • 5:£1.1600
    • 25:£1.0600
    • 100:£0.8100
    • 250:£0.7630
    • 500:£0.7160
    FQP8N60C
    DISTI # 1095074    		ON SemiconductorMOSFET, N, TO-220
    RoHS: Compliant    		52
    • 1:$1.5100
    FQP8N60C
    DISTI # XSFP00000021118    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		3365
    • 1000:$1.8700
    • 3365:$1.7000
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    Disponibilità
    Azione:
    635
    Su ordine:
    2618
    Inserisci la quantità:
    Il prezzo attuale di FQP8N60C è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,86 USD
    1,86 USD
    10
    1,58 USD
    15,80 USD
    100
    1,27 USD
    127,00 USD
    500
    1,10 USD
    550,00 USD
    1000
    0,92 USD
    920,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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