BSM25GD120DN2

BSM25GD120DN2
Mfr. #:
BSM25GD120DN2
Produttore:
Infineon Technologies
Descrizione:
IGBT Modules 1200V 25A FL BRIDGE
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSM25GD120DN2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Moduli IGBT
RoHS:
Y
Prodotto:
Moduli di silicio IGBT
Configurazione:
Esadecimale
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2.5 V
Corrente continua del collettore a 25 C:
35 A
Corrente di dispersione gate-emettitore:
180 nA
Pd - Dissipazione di potenza:
200 W
Pacchetto/custodia:
EconoPACK 2A
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Vassoio
Altezza:
17 mm
Lunghezza:
107.5 mm
Larghezza:
45 mm
Marca:
Tecnologie Infineon
Stile di montaggio:
Montaggio su telaio
Tensione massima dell'emettitore di gate:
20 V
Tipologia di prodotto:
Moduli IGBT
Quantità confezione di fabbrica:
10
sottocategoria:
IGBT
Parte # Alias:
BSM25GD120DN2BOSA1 SP000100370
Unità di peso:
6.349313 oz
Tags
BSM25GD120DN2, BSM25GD120DN, BSM25GD120D, BSM25GD12, BSM25GD, BSM25G, BSM25, BSM2, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBT - Standard Modules 1200V,25A,FL BRIDGE
***omponent
TRANS IGBT MODULE N-CH 1200V 35A 17ECONOPACK 2
***nell
IGBT MODULE, 1200V, ECONOPACK3; Transistor type:3-Phase Bridge; Voltage, Vces:1200V; Current, Ic continuous a max:25A; Voltage, Vce sat max:3V; Power dissipation:200W; Case style:Econopack 2; Current, Icm pulsed:50A; Power, Pd:200W; Temperature, current:80°C; Temperature, full power rating:25°C; Termination Type:Solder; Transistors, No. of:6; Voltage, Vce sat typ:2.5V; Voltage, Vceo:1200V
Parte # Mfg. Descrizione Azione Prezzo
BSM25GD120DN2BOSA1
DISTI # BSM25GD120DN2BOSA1-ND
Infineon Technologies AGIGBT 2 LOW POWER ECONO2-2
RoHS: Compliant
Min Qty: 10
Container: Tray
Limited Supply - Call
  • 10:$91.5730
BSM25GD120DN2E3224BOSA1
DISTI # BSM25GD120DN2E3224BOSA1-ND
Infineon Technologies AGIGBT 2 LOW POWER ECONO2-2
RoHS: Compliant
Min Qty: 10
Container: Tray
Limited Supply - Call
  • 10:$91.5730
BSM25GD120DN2BOSA1
DISTI # BSM25GD120DN2BOSA1
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm - Trays (Alt: BSM25GD120DN2BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray
Americas - 0
  • 10:$85.3900
  • 20:$82.3900
  • 40:$79.3900
  • 60:$76.6900
  • 100:$75.2900
BSM25GD120DN2E3224
DISTI # SP000100361
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: SP000100361)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 0
  • 1:€81.2900
  • 10:€78.8900
  • 25:€77.9900
  • 50:€74.0900
  • 100:€72.7900
  • 500:€71.9900
  • 1000:€70.9900
BSM25GD120DN2E3224BOSA1
DISTI # BSM25GD120DN2E3224BOSA1
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm T/R - Trays (Alt: BSM25GD120DN2E3224BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray
Americas - 0
  • 10:$85.3900
  • 20:$82.3900
  • 40:$79.3900
  • 60:$76.6900
  • 100:$75.2900
BSM25GD120DN2
DISTI # 95M4164
Infineon Technologies AGIGBT MOD, N-CH, 1.2KV, 35A, ECONOPACK 2,Transistor Polarity:N Channel,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:200W,Collector Emitter Voltage V(br)ceo:1.2kV,Product Range:-RoHS Compliant: Yes0
  • 1:$94.9300
  • 5:$93.1900
  • 10:$88.9900
BSM25GD120DN2
DISTI # 641-BSM25GD120DN2
Infineon Technologies AGIGBT Modules 1200V 25A FL BRIDGE
RoHS: Compliant
0
    BSM25GD120DN2E3224
    DISTI # 641-BSM25GD120DN2E32
    Infineon Technologies AGIGBT Modules N-CH 1.2KV 35A
    RoHS: Compliant
    0
    • 1:$94.9300
    • 5:$93.1900
    • 10:$88.9900
    • 25:$86.0300
    BSM25GD120DN2E3224
    DISTI # IGBT1939
    Infineon Technologies AGSixpack1200V 35A Econo 2
    RoHS: Compliant
    Stock DE - 0Stock US - 0
    • 10:$100.9500
    • 20:$86.2100
    BSM25GD120DN2
    DISTI # 1496948
    Infineon Technologies AGIGBT MODULE, 1200V, ECONOPACK3
    RoHS: Compliant
    0
    • 1:£73.2500
    • 5:£71.9100
    • 10:£70.6300
    BSM25GD120DN2
    DISTI # 1496948
    Infineon Technologies AGIGBT MODULE, 1200V, ECONOPACK3
    RoHS: Compliant
    0
    • 1:$150.2200
    • 5:$147.4700
    • 10:$146.4300
    Immagine Parte # Descrizione
    BSM25GD120DN2

    Mfr.#: BSM25GD120DN2

    OMO.#: OMO-BSM25GD120DN2

    IGBT Modules 1200V 25A FL BRIDGE
    BSM25GAL120D

    Mfr.#: BSM25GAL120D

    OMO.#: OMO-BSM25GAL120D-1190

    Nuovo e originale
    BSM25GAL120DN2

    Mfr.#: BSM25GAL120DN2

    OMO.#: OMO-BSM25GAL120DN2-1190

    Nuovo e originale
    BSM25GB100D

    Mfr.#: BSM25GB100D

    OMO.#: OMO-BSM25GB100D-1190

    Insulated Gate Bipolar Transistor, 25A I(C), 1000V V(BR)CES, N-Channel
    BSM25GD100D

    Mfr.#: BSM25GD100D

    OMO.#: OMO-BSM25GD100D-1190

    Nuovo e originale
    BSM25GD120DN1

    Mfr.#: BSM25GD120DN1

    OMO.#: OMO-BSM25GD120DN1-1190

    Nuovo e originale
    BSM25GD120DN2E224

    Mfr.#: BSM25GD120DN2E224

    OMO.#: OMO-BSM25GD120DN2E224-1190

    Nuovo e originale
    BSM25GP120B2

    Mfr.#: BSM25GP120B2

    OMO.#: OMO-BSM25GP120B2-1190

    Nuovo e originale
    BSM25GD120DN2BOSA1

    Mfr.#: BSM25GD120DN2BOSA1

    OMO.#: OMO-BSM25GD120DN2BOSA1-INFINEON-TECHNOLOGIES

    35 A, 1200 V, N-CHANNEL IGBT
    BSM25GD120DN2

    Mfr.#: BSM25GD120DN2

    OMO.#: OMO-BSM25GD120DN2-125

    IGBT Modules 1200V 25A FL BRIDGE
    Disponibilità
    Azione:
    Available
    Su ordine:
    1000
    Inserisci la quantità:
    Il prezzo attuale di BSM25GD120DN2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    94,92 USD
    94,92 USD
    5
    93,18 USD
    465,90 USD
    10
    88,98 USD
    889,80 USD
    25
    86,02 USD
    2 150,50 USD
    100
    80,09 USD
    8 009,00 USD
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