CSD17579Q3AT

Mfr. #:: CSD17579Q3AT
Descrizione:: MOSFET 30V NCh NexFET Pwr MOSFET
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: CSD17579Q3AT Scheda dati
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Maggiori informazioni:: CSD17579Q3AT maggiori informazioni CSD17579Q3AT Product Details

Attributo del prodotto
Valore attributo

Produttore:: Texas Instruments

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: VSONP-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 30 V

Id - Corrente di scarico continua:: 20 A

Rds On - Resistenza Drain-Source:: 11.8 mOhms

Vgs th - Tensione di soglia gate-source:: 1.5 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 5.3 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 29 W

Configurazione:: Separare

Nome depositato:: NexFET

Confezione:: Bobina

Altezza:: 0.9 mm

Lunghezza:: 3.15 mm

Serie:: CSD17579Q3A

Tipo di transistor:: 1 N-Channel

Larghezza:: 3 mm

Marca:: Texas Instruments

Transconduttanza diretta - Min:: 37 S

Tempo di caduta:: 1 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 5 ns

Quantità confezione di fabbrica:: 250

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 11 ns

Tempo di ritardo di accensione tipico:: 2 ns

Unità di peso:: 0.000963 oz

Tags: CSD17579, CSD1757, CSD175, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17579Q3AT Descrizione

***as Instruments: 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.2 mOhm 8-VSONP -55 to 150

***ical: Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R

***ark: Mosfet, N Ch, 30V, 20A, Vson-8

*** Stop Electro: Power Field-Effect Transistor, 11A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ure Electronics: N-Channle 30 V 22 A 10 mohm Surface Mount PowerTrench Mosfet - Power 56

***emi: N-Channel PowerTrench® MOSFET 30V, 22A, 10mΩ

*** Stop Electro: Power Field-Effect Transistor, 13.5A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 30V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:29W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

*** Source Electronics: MOSFET N-CH 30V 24A 8-SO / Trans MOSFET N-CH 30V 24A 8-Pin PowerPAK SO EP T/R

***ure Electronics: Single N-Channel 30 V 0.0089 O 12.8 nC Power Mosfet - PowerPAK SO-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 24A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: N-Ch PowerPAK SO-8 Copper 30V 8.5 mohm@10V

***el Electronic: MACH SCREW BINDING SLOTTED #6-32

***ark: TAPE REEL/SINGLE PT7 NCH POWERTRENCH MOSFET IN PQFN5X6

***et: Trans MOSFET N-CH 30V 13.5A 8-Pin Power 56 T/R

***emi: Single N-Channel Power MOSFET 30V, 40A, 9.4mΩ

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V Rohs Compliant: Yes

***nell: MOSFET, AEC-Q101, N-CH, 30V, WDFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 26W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans MOSFET N-CH Si 30V 14.2A 8-Pin PowerPAK SO EP

*** Electronics: MOSFET 30V .0090ohm@10V 18A N-Ch T-FET

***ark: N-Ch PowerPAK SO-8 CU 30V 9mohm@10V

***S: French Electronic Distributor since 1988

***(Formerly Allied Electronics): IRF8714PBF N-channel MOSFET Transistor; 14 A; 30 V; 8-Pin SOIC

***roFlash: Single N-Channel 30 V 8.7 mOhm 8.1 nC HEXFET¬Æ Power Mosfet - SOIC-8

***nell: MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation P

***as Instruments Inc.: This 30 V, 8.7 m&ohm;, SON 3.3 mm Ã 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

CSD17579Q3AT Maggiori informazioni

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Parte #	Descrizione	Azione	Prezzo
CSD17579Q3AT DISTI # 31708936	Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R RoHS: Compliant	10000	1250:$0.2744 750:$0.2994 500:$0.3410 250:$0.3992
CSD17579Q3AT DISTI # 296-38463-1-ND	MOSFET N-CH 30V 35A 8VSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8451In Stock	100:$0.4672 10:$0.6060 1:$0.6900
CSD17579Q3AT DISTI # 296-38463-6-ND	MOSFET N-CH 30V 35A 8VSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8451In Stock	100:$0.4672 10:$0.6060 1:$0.6900
CSD17579Q3AT DISTI # 296-38463-2-ND	MOSFET N-CH 30V 35A 8VSON RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	8250In Stock	1250:$0.2688 750:$0.2940 500:$0.3360 250:$0.3948
CSD17579Q3AT DISTI # V72:2272_07248811	Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R RoHS: Compliant	0
CSD17579Q3AT DISTI # V39:1801_07248811	Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R RoHS: Compliant	0
CSD17579Q3AT DISTI # CSD17579Q3AT	Trans MOSFET N-CH 30V 39A 8-Pin VSONP T/R (Alt: CSD17579Q3AT) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Europe - 1250	2500:€0.2039 1500:€0.2189 1000:€0.2549 500:€0.2779 250:€0.3399
CSD17579Q3AT DISTI # CSD17579Q3AT	Trans MOSFET N-CH 30V 39A 8-Pin VSONP T/R (Alt: CSD17579Q3AT) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Asia - 0
CSD17579Q3AT DISTI # CSD17579Q3AT	Trans MOSFET N-CH 30V 39A 8-Pin VSONP T/R - Tape and Reel (Alt: CSD17579Q3AT) RoHS: Compliant Min Qty: 1500 Container: Reel	Americas - 0	15000:$0.2108 7500:$0.2168 4500:$0.2243 3000:$0.2320 1500:$0.2438
CSD17579Q3AT	30V, N ch NexFET MOSFET™, single SON3x3, 14.2mOhm	4327	1000:$0.1900 750:$0.2100 500:$0.2700 250:$0.3300 100:$0.3500 25:$0.4200 10:$0.4500 1:$0.5000
CSD17579Q3A DISTI # 595-CSD17579Q3A	MOSFET CSD17579Q3A 30 V 8-VSONP RoHS: Compliant	16916	1:$0.6400 10:$0.5300 100:$0.3220 1000:$0.2490 2500:$0.2120 10000:$0.1980 22500:$0.1870
CSD17579Q3AT DISTI # 595-CSD17579Q3AT	MOSFET 30V NCh NexFET Pwr MOSFET RoHS: Compliant	1831	1:$0.6300 10:$0.5200 100:$0.3360 250:$0.3360 1000:$0.2690 2000:$0.2440 5000:$0.2270 10000:$0.2190 25000:$0.2100
CSD17579Q3AT	Power Field-Effect Transistor, 11A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	317	1000:$0.2200 500:$0.2400 100:$0.2500 25:$0.2600 1:$0.2800
CSD17579Q3AT DISTI # 9083849P	N-CHANNEL NEXFET MOSFET 30V 11A SON8, RL	370	400:£0.2340 200:£0.2440 100:£0.2900 50:£0.3340
CSD17579Q3AT DISTI # CSD17579Q3AT	Transistor: N-MOSFET,unipolar,30V,20A,29W,VSONP8 3,3x3,3mm	229	1:$0.6300 5:$0.4700

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Disponibilità

Azione:: Available
Su ordine:: 1984
Inserisci la quantità:

Il prezzo attuale di CSD17579Q3AT è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,63 USD~~; ~~0,63 USD~~

10: ~~0,52 USD~~; ~~5,20 USD~~

100: ~~0,34 USD~~; ~~33,60 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

CSD17579 4
CSD1757 23
CSD175 63
CSD17 117
CSD1 359
CSD 800

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CSD17579Q3AT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes