HGTP7N60B

HGTP7N60B
Mfr. #:
HGTP7N60B
Produttore:
ON Semiconductor
Descrizione:
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HGTP7N60B Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
HGTP7N60B, HGTP7, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
HGTP7N60B3D
DISTI # HGTP7N60B3D-ND
ON SemiconductorIGBT 600V 14A 60W TO220AB
RoHS: Compliant
Min Qty: 400
Container: Tube
Limited Supply - Call
    HGTP7N60B3D
    DISTI # HGTP7N60B3D
    ON SemiconductorTRANS IGBT CHIP N-CH 600V 14A 3PIN TO-220AB - Bulk (Alt: HGTP7N60B3D)
    Min Qty: 334
    Container: Bulk
    Americas - 0
    • 334:$1.5900
    • 668:$1.5900
    • 1002:$1.5900
    • 1670:$1.5900
    • 3340:$1.5900
    HGTP7N60B3D
    DISTI # 512-HGTP7N60B3D
    ON SemiconductorIGBT Transistors PWR IGBT 14A 600V N-CHANNEL
    RoHS: Compliant
    0
      HGTP7N60B3DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
      RoHS: Compliant
      3643
      • 1000:$0.9900
      • 500:$1.0400
      • 100:$1.0800
      • 25:$1.1300
      • 1:$1.2200
      HGTP7N60B3DHarris SemiconductorInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
      RoHS: Compliant
      17615
      • 1000:$1.7100
      • 500:$1.8000
      • 100:$1.8800
      • 25:$1.9600
      • 1:$2.1100
      Immagine Parte # Descrizione
      HGTP10N50E1D

      Mfr.#: HGTP10N50E1D

      OMO.#: OMO-HGTP10N50E1D-1190

      Insulated Gate Bipolar Transistor, 17.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB
      HGTP12N60A4D?

      Mfr.#: HGTP12N60A4D?

      OMO.#: OMO-HGTP12N60A4D--1190

      PT P TO220 12A 600V SMPS
      HGTP12N60C3D G12N60C3D

      Mfr.#: HGTP12N60C3D G12N60C3D

      OMO.#: OMO-HGTP12N60C3D-G12N60C3D-1190

      Nuovo e originale
      HGTP14N44G3VL

      Mfr.#: HGTP14N44G3VL

      OMO.#: OMO-HGTP14N44G3VL-1190

      300mJ, 440V, N-Channel Ignition IGBT - Bulk (Alt: HGTP14N44G3VL)
      HGTP15N50E1

      Mfr.#: HGTP15N50E1

      OMO.#: OMO-HGTP15N50E1-1190

      Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-220AB
      HGTP1N120BND

      Mfr.#: HGTP1N120BND

      OMO.#: OMO-HGTP1N120BND-1190

      Nuovo e originale
      HGTP20N35G3VL

      Mfr.#: HGTP20N35G3VL

      OMO.#: OMO-HGTP20N35G3VL-1190

      Logic Level, Voltage Clamping IGBTs - Bulk (Alt: HGTP20N35G3VL)
      HGTP20N60B3D

      Mfr.#: HGTP20N60B3D

      OMO.#: OMO-HGTP20N60B3D-1190

      Nuovo e originale
      HGTP3N60C3

      Mfr.#: HGTP3N60C3

      OMO.#: OMO-HGTP3N60C3-1190

      Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB
      HGTP5N120BN

      Mfr.#: HGTP5N120BN

      OMO.#: OMO-HGTP5N120BN-1190

      Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      2000
      Inserisci la quantità:
      Il prezzo attuale di HGTP7N60B è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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      10
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      100
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      500
      0,00 USD
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      1000
      0,00 USD
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