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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SIR882DP-T1-GE3 DISTI # V72:2272_09216058 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R RoHS: Compliant | 1 |
|
| SIR882DP-T1-GE3 DISTI # V36:1790_09216058 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R RoHS: Compliant | 0 |
|
| SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 100V 60A PPAK SO-8 Min Qty: 1 Container: Cut Tape (CT) | 16500In Stock |
|
| SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 100V 60A PPAK SO-8 Min Qty: 1 Container: Digi-Reel® | 16500In Stock |
|
| SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 60A PPAK SO-8 Min Qty: 3000 Container: Tape & Reel (TR) | 15000In Stock |
|
| SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR882DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 3000 |
|
| SIR882DP-T1-GE3 DISTI # 86R3813 | Vishay Intertechnologies | MOSFET, N CH, 100V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:83WRoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SIR882DP-T1-GE3 DISTI # 94T2661 | Vishay Intertechnologies | MOSFET, N CH, 100V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SIR882DP-T1-GE3 | Vishay Intertechnologies | MOSFET 100 Volts 60 Amps 83 Watts | Americas - | |
| SIR882DP-T1-GE3 | Vishay Siliconix | POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 100V, 0.0087OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 32 |
|
| SIR882DP-T1-GE3 DISTI # 1859000 | Vishay Intertechnologies | MOSFET,N CH,DIODE,100V,60A,PPAKSO8 RoHS: Compliant | 6 |
|
| SIR882DP-T1-GE3 DISTI # 1859000 | Vishay Intertechnologies | MOSFET,N CH,DIODE,100V,60A,PPAKSO8 RoHS: Compliant | 0 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SIR882DP-T1-GE3 OMO.#: OMO-SIR882DP-T1-GE3 |
MOSFET 100 Volts 60 Amps 83 Watts |
|
Mfr.#: SIR882DP OMO.#: OMO-SIR882DP-1190 |
Nuovo e originale |
|
Mfr.#: SIR882DP-T1-GE3 OMO.#: OMO-SIR882DP-T1-GE3-VISHAY |
MOSFET N-CH 100V 60A PPAK SO-8 |
|
|
Mfr.#: SIR882DP-T1-GE3/R882 |
Nuovo e originale |
|
|
Mfr.#: SIR882DP-TI-GE3 OMO.#: OMO-SIR882DP-TI-GE3-1190 |
Nuovo e originale |