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IPB100N08S2L-07

IPB100N08S2L-07
Mfr. #:
IPB100N08S2L-07
Produttore:
Infineon Technologies
Descrizione:
RF Bipolar Transistors MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB100N08S2L-07 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
IPB100N08S2L-07 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
OptiMOS
Confezione
Bobina
Alias ​​parziali
IPB100N08S2L07ATMA1 IPB100N08S2L07XT SP000219053
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
300 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
22 ns
Ora di alzarsi
56 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
100 A
Vds-Drain-Source-Breakdown-Voltage
75 V
Rds-On-Drain-Source-Resistenza
6.5 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
85 ns
Tempo di ritardo all'accensione tipico
19 ns
Modalità canale
Aumento
Tags
IPB100N08S2L, IPB100N08, IPB100N0, IPB100N, IPB100, IPB10, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IPB100N08S2L07ATMA1
DISTI # IPB100N08S2L07ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 75V 100A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.4977
IPB100N08S2L07ATMA1
DISTI # IPB100N08S2L07ATMA1		Infineon Technologies AGTrans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB100N08S2L07ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.2900
  • 2000:$1.2900
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.0900
IPB100N08S2L07ATMA1
DISTI # SP000219053		Infineon Technologies AGTrans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263 (Alt: SP000219053)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€1.6900
  • 2000:€1.2900
  • 4000:€1.1900
  • 6000:€1.1900
  • 10000:€1.0900
IPB100N08S2L07ATMA1Infineon Technologies AG 
RoHS: Not Compliant		17000
  • 1000:$1.4400
  • 500:$1.5200
  • 100:$1.5800
  • 25:$1.6500
  • 1:$1.7700
IPB100N08S2L-07
DISTI # 726-IPB100N08S2L07		Infineon Technologies AGMOSFET N-Ch 75V 100A D2PAK-2 OptiMOS
RoHS: Compliant		791
  • 1:$2.6400
  • 10:$2.2400
  • 100:$1.7900
  • 500:$1.5700
  • 1000:$1.3000
  • 2000:$1.2100
  • 5000:$1.1700
IPB100N08S2L07ATMA1
DISTI # 726-IPB100N08S2L07AT		Infineon Technologies AGMOSFET N-Ch 75V 100A D2PAK-2 OptiMOS
RoHS: Compliant		0
  • 1:$2.7700
  • 10:$2.3500
  • 100:$1.8800
  • 500:$1.6500
  • 1000:$1.3700
  • 2000:$1.2700
  • 5000:$1.2300
IPB100N08S2L-07
DISTI # IPB100N08S2L-07		Infineon Technologies AGPower Field-Effect Transistor, 100AI(D),75V,0.0087ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-263AB
RoHS: Compliant		505
    Immagine Parte # Descrizione
    IPB100N08S2L07ATMA1

    Mfr.#: IPB100N08S2L07ATMA1

    OMO.#: OMO-IPB100N08S2L07ATMA1

    		 MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS
    IPB100N06S2L05ATMA2

    Mfr.#: IPB100N06S2L05ATMA2

    OMO.#: OMO-IPB100N06S2L05ATMA2

    		 MOSFET N-CHANNEL_55/60V
    IPB100N08S2-07

    Mfr.#: IPB100N08S2-07

    OMO.#: OMO-IPB100N08S2-07

    		 MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS
    IPB100N04S4H2ATMA1

    Mfr.#: IPB100N04S4H2ATMA1

    OMO.#: OMO-IPB100N04S4H2ATMA1

    		 MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2
    IPB100N04S3-03

    Mfr.#: IPB100N04S3-03

    OMO.#: OMO-IPB100N04S3-03

    		 MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T
    IPB100N04S2L-03

    Mfr.#: IPB100N04S2L-03

    OMO.#: OMO-IPB100N04S2L-03-1190

    		 MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS
    IPB100N06S3-04

    Mfr.#: IPB100N06S3-04

    OMO.#: OMO-IPB100N06S3-04-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 100A TO-263
    IPB100N10S3-05

    Mfr.#: IPB100N10S3-05

    OMO.#: OMO-IPB100N10S3-05-1190

    		 MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T
    IPB100N10S305ATMA1

    Mfr.#: IPB100N10S305ATMA1

    OMO.#: OMO-IPB100N10S305ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V 100A TO263-3
    IPB100N06S2-05

    Mfr.#: IPB100N06S2-05

    OMO.#: OMO-IPB100N06S2-05-317

    		 RF Bipolar Transistors MOSFET N-Ch 55V 100A D2PAK-2 OptiMOS
    Disponibilità
    Azione:
    Available
    Su ordine:
    1500
    Inserisci la quantità:
    Il prezzo attuale di IPB100N08S2L-07 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,76 USD
    1,76 USD
    10
    1,67 USD
    16,67 USD
    100
    1,58 USD
    157,95 USD
    500
    1,49 USD
    745,90 USD
    1000
    1,40 USD
    1 404,00 USD
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