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BUK9507-30B,127

BUK9507-30B,127
Mfr. #:
BUK9507-30B,127
Produttore:
Nexperia
Descrizione:
RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BUK9507-30B,127 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BUK9507-30B,127 DatasheetBUK9507-30B,127 Datasheet (P4-P6)BUK9507-30B,127 Datasheet (P7-P9)BUK9507-30B,127 Datasheet (P10-P12)BUK9507-30B,127 Datasheet (P13-P15)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
NXP
categoria di prodotto
FET - Single
RoHS
Particolari
Marca
Semiconduttori NXP
Stile di montaggio
Foro passante
Pacchetto/custodia
TO-220-3
Numero di canali
1 Channel
Polarità del transistor
Canale N
Vds - Tensione di rottura Drain-Source
30 V
Id - Corrente di drenaggio continua
108 A
Rds On - Resistenza Drain-Source
5 mOhms
Vgs - Tensione Gate-Source
15 V
Temperatura di esercizio massima
+ 175 C
Tecnologia
si
Confezione
Tubo
Modalità canale
Aumento
Configurazione
Separare
Tempo di caduta
98 ns
Temperatura di esercizio minima
- 55 C
Pd - Dissipazione di potenza
157 W
Ora di alzarsi
135 ns
Tipo di transistor
1 N-Channel
Tempo di ritardo allo spegnimento tipico
99 ns
Tempo di ritardo di accensione tipico
30 ns
Parte # Alias
BUK9507-30B
Unità di peso
0.211644 oz
Tags
BUK9507, BUK950, BUK95, BUK9, BUK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Trans MOSFET N-CH 30V 108A Automotive 3-Pin(3+Tab) TO-220AB Tube
***peria
N-channel TrenchMOS logic level FET
***or
PFET, 75A I(D), 30V, 0.009OHM, 1
***(Formerly Allied Electronics)
IRL3803VPBF N-channel MOSFET Transistor, 140 A, 30 V, 3-Pin TO-220
***ure Electronics
Single N-Channel 30 V 5.5 mOhm 76 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***ow.cn
Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube
***ment14 APAC
MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140A; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:470A; SMD Marking:IRL3803VPBF; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.006Ohm;ID 140A;TO-220AB;PD 200W;VGS +/-16V
*** Source Electronics
Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 30V 140A TO-220AB
***ure Electronics
Single N-Channel 30 V 0.006 Ohm 140 nC HEXFET® Power Mosfet - TO-220-3
***ment14 APAC
MOSFET, N, 30V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:480A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***emi
N-Channel PowerTrench® MOSFET 30V, 114A, 5.3mΩ
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***ter Electronics
30V,114A,5.3 OHM,N-CH,TO220,POWER TRENCH MOSFET
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 105A, 6 MOHM, 23 NCQG, TO-220AB, Pb-Free
***ure Electronics
Single N-Channel 30 V 6 mOhm 23 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
N Channel Mosfet, 30V, 105A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.006Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, 105A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Junction to Case Thermal Resistance A:1.32°C/W; On State resistance @ Vgs = 10V:6ohm; Package / Case:TO-220AB; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:420A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V
***et Europe
Trans MOSFET N-CH 30V 85A 3-Pin(3+Tab) TO-220AB
***ronik
MOSFET 30V 85A 3.6mOhm TO220 RoHSconf
***ment14 APAC
MOSFET,N CH,W DIODE,30V,85A,TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78.1W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
***ark
RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Parte # Mfg. Descrizione Azione Prezzo
BUK9507-30B,127
DISTI # C1S537100441902		NexperiaTrans MOSFET N-CH 30V 108A Automotive 3-Pin(3+Tab) TO-220AB Rail170
  • 50:$0.6470
  • 1:$0.6550
BUK9507-30B,127
DISTI # 568-5725-5-ND		NexperiaMOSFET N-CH 30V 75A TO220AB
RoHS: Compliant
Min Qty: 5000
Container: Tube		Limited Supply - Call
    BUK9507-30B,127
    DISTI # BUK9507-30B127    		NexperiaTrans MOSFET N-CH 30V 108A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: BUK9507-30B127)
    RoHS: Not Compliant
    Min Qty: 544
    Container: Bulk    		Americas - 0
    • 544:$0.6699
    • 546:$0.6439
    • 1090:$0.6189
    • 2720:$0.5959
    • 5440:$0.5849
    BUK9507-30B
    DISTI # 771-BUK9507-30B    		NexperiaMOSFET HIGH PERF TRENCHMOS
    RoHS: Compliant    		0
      BUK9507-30B,127
      DISTI # 771-BUK9507-30B127      		NexperiaMOSFET HIGH PERF TRENCHMOS
      RoHS: Compliant      		0
        BUK9507-30B127NXP SemiconductorsNow Nexperia BUK9507-30B - Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        RoHS: Not Compliant        		11973
        • 1000:$0.3800
        • 500:$0.4000
        • 100:$0.4200
        • 25:$0.4400
        • 1:$0.4700
        Immagine Parte # Descrizione
        BUK9507-30B

        Mfr.#: BUK9507-30B

        OMO.#: OMO-BUK9507-30B-1152

        		 MOSFET HIGH PERF TRENCHMOS
        BUK9507-30B127

        Mfr.#: BUK9507-30B127

        OMO.#: OMO-BUK9507-30B127-1190

        		 Now Nexperia BUK9507-30B - Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        BUK9507-30B,127

        Mfr.#: BUK9507-30B,127

        OMO.#: OMO-BUK9507-30B-127-NEXPERIA

        		 RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS
        Disponibilità
        Azione:
        Available
        Su ordine:
        4500
        Inserisci la quantità:
        Il prezzo attuale di BUK9507-30B,127 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        1,03 USD
        1,03 USD
        10
        0,98 USD
        9,78 USD
        100
        0,93 USD
        92,61 USD
        500
        0,87 USD
        437,35 USD
        1000
        0,82 USD
        823,20 USD
        A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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