SI3443BDV-T1-E3

Mfr. #:: SI3443BDV-T1-E3
Produttore:: Vishay
Descrizione:: MOSFET P-CH 20V 3.6A 6-TSOP
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI3443BDV-T1-E3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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Maggiori informazioni:: SI3443BDV-T1-E3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Single

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI3443BDV-E3

Unità di peso: 0.000705 oz

Stile di montaggio: SMD/SMT

Nome depositato: TrenchFET

Pacchetto-Custodia: SOT-23-6 Thin, TSOT-23-6

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: 6-TSOP

Configurazione: Separare

Tipo FET: MOSFET Canale P, ossido di metallo

Potenza-Max: 1.1W

Tipo a transistor: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

Ingresso-Capacità-Ciss-Vds: -

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 3.6A (Ta)

Rds-On-Max-Id-Vgs: 60 mOhm @ 4.7A, 4.5V

Vgs-th-Max-Id: 1.4V @ 250μA

Gate-Carica-Qg-Vgs: 9nC @ 4.5V

Pd-Power-Dissipazione: 1.1 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 35 ns

Ora di alzarsi: 35 ns

Vgs-Gate-Source-Voltage: 12 V

Id-Continuo-Scarico-Corrente: 3.6 A

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Rds-On-Drain-Source-Resistenza: 60 mOhms

Polarità del transistor: Canale P

Tempo di ritardo allo spegnimento tipico: 45 ns

Tempo di ritardo all'accensione tipico: 22 ns

Modalità canale: Aumento

Tags: SI3443BDV-T, SI3443B, SI3443, SI344, SI34, SI3

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3443BDV-T1-E3 Maggiori informazioni

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI3443BDV-T1-E3 DISTI # V72:2272_09216643	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.6A 6-Pin TSOP T/R RoHS: Compliant	545	500:$0.2674 250:$0.3523 100:$0.3914 25:$0.4643 10:$0.5159 1:$0.6460
SI3443BDV-T1-E3 DISTI # SI3443BDV-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 3.6A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	20741In Stock	1000:$0.2546 500:$0.3295 100:$0.4494 10:$0.5990 1:$0.7100
SI3443BDV-T1-E3 DISTI # SI3443BDV-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 3.6A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	20741In Stock	1000:$0.2546 500:$0.3295 100:$0.4494 10:$0.5990 1:$0.7100
SI3443BDV-T1-E3 DISTI # SI3443BDV-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 3.6A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	18000In Stock	3000:$0.2254
SI3443BDV-T1-E3 DISTI # 30162013	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.6A 6-Pin TSOP T/R RoHS: Compliant	6000	3000:$0.1573
SI3443BDV-T1-E3 DISTI # 30619081	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.6A 6-Pin TSOP T/R RoHS: Compliant	610	500:$0.2231 100:$0.2626 50:$0.3226 15:$0.4832
SI3443BDV-T1-E3 DISTI # 27539924	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.6A 6-Pin TSOP T/R RoHS: Compliant	545	500:$0.2674 250:$0.3523 100:$0.3914 52:$0.4643
SI3443BDV-T1-E3 DISTI # SI3443BDV-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.6A 6-Pin TSOP T/R (Alt: SI3443BDV-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$1.1880 6000:$0.9139 9000:$0.7274 15000:$0.6145 30000:$0.5657 75000:$0.5483 150000:$0.5319
SI3443BDV-T1-E3 DISTI # SI3443BDV-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.6A 6-Pin TSOP T/R (Alt: SI3443BDV-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.2819 6000:€0.1919 12000:€0.1649 18000:€0.1529 30000:€0.1419
SI3443BDV-T1-E3 DISTI # SI3443BDV-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.6A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3443BDV-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1489 6000:$0.1449 12000:$0.1389 18000:$0.1349 30000:$0.1309
SI3443BDV-T1-E3 DISTI # 45J3814	Vishay Intertechnologies	MOSFET, P CHANNEL, -20V, -3.6A, TSOP-6, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.6A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:6Pins , RoHS Compliant: Yes	0	1:$0.2520 3000:$0.2500 6000:$0.2380 12000:$0.2110
SI3443BDV-T1-E3 DISTI # 05W6938	Vishay Intertechnologies	MOSFET, P CHANNEL, -20V, -3.6A, TSOP-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.6A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1.4V , RoHS Compliant: Yes	0	1:$0.4920 10:$0.4760 100:$0.3760 250:$0.3570 500:$0.3340 1000:$0.2670
SI3443BDV-T1-E3 DISTI # 70026199	Vishay Siliconix	P-CHANNEL 2.5-V (G-S) MOSFET RoHS: Compliant	0	3000:$0.2400 6000:$0.2300 15000:$0.2200 30000:$0.2100 75000:$0.2000
SI3443BDV-T1-E3 DISTI # 781-SI3443BDV-E3	Vishay Intertechnologies	MOSFET 20V 4.4A 2W RoHS: Compliant	7867	1:$0.6800 10:$0.5430 100:$0.4120 500:$0.3400 1000:$0.2720 3000:$0.2470 6000:$0.2300 9000:$0.2220
SI3443BDV-T1-E3	Vishay Intertechnologies	Single P-Channel 20 V 0.06 Ohms Surface Mount Power Mosfet - TSOP-6 RoHS: Compliant	9000Reel	3000:$0.1540 6000:$0.1310
SI3443BDV-T1-E3	Vishay Intertechnologies	MOSFET Transistor, P-Channel, TSOP	2700	953:$0.1875 201:$0.2100 1:$0.6000
SI3443BDV-T1-E3	Vishay Siliconix	MOSFET Transistor, P-Channel, TSOP	298	201:$0.2100 45:$0.3000 1:$0.6000
SI3443BDV-T1-E3	Vishay Semiconductors	MOSFET Transistor, P-Channel, TSOP	1712	209:$0.1600 26:$0.2400 1:$0.8000
SI3443BDV-T1-E3	Vishay Intertechnologies	MOSFET Transistor, P-Channel, TSOP	2032	534:$0.3000 134:$0.3750 1:$0.7500
SI3443BDV-T1-E3	Vishay Intertechnologies	MOSFET Transistor, P-Channel, TSOP	2400	2099:$0.3337 421:$0.3814 1:$0.9535
SI3443BDV-T1-E3	Vishay Siliconix		2140	9:$0.5625 28:$0.2812 179:$0.1687 891:$0.1125
SI3443BDV-T1-E3	Vishay Intertechnologies		2888
SI3443BDV-T1-E3	Vishay Intertechnologies		2730
SI3443BDV-T1-E3	Vishay Siliconix		13412
SI3443BDVT1E3	Vishay Intertechnologies	RoHS: Compliant	Europe - 1500
SI3443BDV-T1-E3	Vishay Intertechnologies	INSTOCK	110
SI3443BDV-T1-E3	Vishay Siliconix	INSTOCK	2538
SI3443BDV-T1-E3 DISTI # C1S803601000725	Vishay Intertechnologies	MOSFETs RoHS: Compliant	545	250:$0.3523 100:$0.3914 25:$0.4643 10:$0.5159
SI3443BDV-T1-E3 DISTI # C1S806001122828	Vishay Intertechnologies	MOSFETs	610	500:$0.1750 100:$0.2060 50:$0.2530 10:$0.3790 1:$1.4200
SI3443BDV-T1-E3 DISTI # 1497611	Vishay Intertechnologies	RoHS: Compliant	0	1:$1.0800 10:$0.8590 100:$0.6530 500:$0.5380 1000:$0.4310 3000:$0.3910 6000:$0.3650 9000:$0.3520
SI3443BDV-T1-E3 DISTI # XSFP00000147515	Vishay Siliconix	Small SignalField-EffectTransistor,3.6AI(D),20V,1-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant	58551	3000:$0.3080 58551:$0.2800
SI3443BDV-T1-E3	Vishay Intertechnologies	MOSFET 20V 4.4A 2W RoHS: Compliant	Americas -

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI3443BDV-T1-E3 OMO.#: OMO-SI3443BDV-T1-E3	MOSFET 20V 4.4A 2W
	Mfr.#: SI3443BDV-T1-GE3 OMO.#: OMO-SI3443BDV-T1-GE3	MOSFET 20V 4.7A 2.0W 60mohm @ 4.5V
	Mfr.#: SI3443BDV OMO.#: OMO-SI3443BDV-1190	Nuovo e originale
	Mfr.#: SI3443BDV-T1 OMO.#: OMO-SI3443BDV-T1-1190	Nuovo e originale
	Mfr.#: SI3443BDV-T1-GE3 OMO.#: OMO-SI3443BDV-T1-GE3-VISHAY	MOSFET P-CH 20V 3.6A 6-TSOP
	Mfr.#: SI3443BDVT1E3 OMO.#: OMO-SI3443BDVT1E3-1190	Small Signal Field-Effect Transistor, 3.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: SI3443BDV-T1-E3-CUT TAPE OMO.#: OMO-SI3443BDV-T1-E3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SI3443BDV-T1-E3 OMO.#: OMO-SI3443BDV-T1-E3-VISHAY	MOSFET P-CH 20V 3.6A 6-TSOP

Disponibilità

Azione:: Available
Su ordine:: 2500
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Il prezzo attuale di SI3443BDV-T1-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,17 USD~~; ~~0,17 USD~~

10: ~~0,16 USD~~; ~~1,60 USD~~

100: ~~0,15 USD~~; ~~15,19 USD~~

500: ~~0,14 USD~~; ~~71,70 USD~~

1000: ~~0,14 USD~~; ~~135,00 USD~~

Iniziare con

SI3443BDV-T 4
SI3443B 6
SI3443 37
SI344 117
SI34 504
SI3 1735

SI3443BDV-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes