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S25FL128SDSBHV200

S25FL128SDSBHV200
Mfr. #:
S25FL128SDSBHV200
Produttore:
Cypress Semiconductor
Descrizione:
IC FLASH 128M SPI 80MHZ 24BGA FL-S
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
S25FL128SDSBHV200 Scheda dati
Consegna:
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S25FL128SDSBHV200 maggiori informazioni S25FL128SDSBHV200 Product Details
Attributo del prodotto
Valore attributo
Produttore
Cypress Semiconductor Corp
categoria di prodotto
Memoria
Serie
FL-S
Confezione
Imballaggio alternativo del vassoio
Stile di montaggio
SMD/SMT
Intervallo operativo di temperatura
- 40 C to + 105 C
Pacchetto-Custodia
BGA-24
Temperatura di esercizio
-40°C ~ 105°C (TA)
Interfaccia
Seriale SPI
Tensione di alimentazione
2.7 V ~ 3.6 V
Pacchetto-dispositivo-fornitore
24-BGA (6x8)
Dimensione della memoria
128M (16M x 8)
Tipo di memoria
FLASH - NOR
Velocità
80MHz
Architettura
MirrorBit Eclipse
Formato-Memoria
VELOCE
Standard
Interfaccia flash comune (CFI)
Tipo di interfaccia
SPI
Organizzazione
16 M x 8
Alimentazione-Corrente-Max
100 mA
Larghezza bus dati
8 bit
Alimentazione-Tensione-Max
3.6 V
Alimentazione-Tensione-Min
2.7 V
Frequenza di clock massima
80 MHz
Tipo di cronometraggio
Sincrono
Tags
S25FL128SDSB, S25FL128SDS, S25FL128SD, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Serial NOR Flash Memory, 128 Mbit Density, FBGA-24, RoHS
***et Europe
NOR Flash Serial-SPI 3V 128Mbit 128M x 1bit 8ns 24-Pin BGA Tray
***ark
TRAY PKGED / 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 80-MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, BGA-FAB024 IN TRAY PACKING
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
Parte # Mfg. Descrizione Azione Prezzo
S25FL128SDSBHV200
DISTI # S25FL128SDSBHV200-ND		Cypress SemiconductorIC FLASH 128M SPI 80MHZ 24BGA
RoHS: Compliant
Min Qty: 1
Container: Tray		13In Stock
  • 10:$3.3670
  • 1:$3.7100
S25FL128SDSBHV200
DISTI # 727-S25FL128SDSBHV20		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		0
  • 338:$3.2200
  • 676:$2.6100
  • 1014:$2.4400
  • 2704:$2.3100
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Disponibilità
Azione:
Available
Su ordine:
4500
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Il prezzo attuale di S25FL128SDSBHV200 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
3,46 USD
3,46 USD
10
3,29 USD
32,92 USD
100
3,12 USD
311,85 USD
500
2,95 USD
1 472,65 USD
1000
2,77 USD
2 772,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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