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SSM6N357R,LF

SSM6N357R,LF
Mfr. #:
SSM6N357R,LF
Produttore:
Toshiba
Descrizione:
MOSFET LowON Res MOSFET ID=.65A VDSS=60V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SSM6N357R,LF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM6N357R,LF DatasheetSSM6N357R,LF Datasheet (P4-P6)SSM6N357R,LF Datasheet (P7-P9)
ECAD Model:
Maggiori informazioni:
SSM6N357R,LF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Toshiba
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TSOP-6F
Numero di canali:
2 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
650 mA
Rds On - Resistenza Drain-Source:
1.8 Ohms
Vgs th - Tensione di soglia gate-source:
1.3 V
Vgs - Tensione Gate-Source:
12 V
Qg - Carica cancello:
1.5 nC
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
1 W
Configurazione:
Dual
Modalità canale:
Aumento
Confezione:
Bobina
Serie:
SSM6N357R
Marca:
Toshiba
Transconduttanza diretta - Min:
500 mS
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
3000 ns
Tempo di ritardo di accensione tipico:
990 ns
Unità di peso:
0.000564 oz
Tags
SSM6N35, SSM6N3, SSM6N, SSM6, SSM
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs
SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs are silicon N-channel MOSFETs designed for relay driver applications. The SSM6N357R,LF comes with 2 channels whereas the SSM3K357R,LF comes with a single channel. These MOSFETs feature 3V gate drive voltage, built-in internal zener diodes, resistors, and 2kV class Human Body Model (HBM). The low ON-resistance MOSFETs offer 60V drain-source voltage, ±12V gate-source voltage, 150°C channel temperature, and 12.6mJ single-pulse avalanche energy. 
SSM6 Low On-resistance MOSFET
Toshiba SSM6 Low On-resistance MOSFETs with high-speed switching operate as both power management switches and analog switches. These MOSFETs provide very low on-resistance as low as 1.1mΩ to a 115Ω maximum for different sets of gate to source voltage range. The SSM6 MOSFETs are available in small profile packages with surface mount compatibility. These MOSFETs offer a low drain to source on-resistance and operate as DC to DC converters. The SSM6 MOSFETs drive a 1.2V minimum to 4.5V maximum gate voltage. These MOSFETs deliver less drain power dissipation up to 150mW producing less heat. The SM66 MOSFETs operate at 12V to 100V input voltage range.   
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Disponibilità
Azione:
Available
Su ordine:
1988
Inserisci la quantità:
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Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,44 USD
0,44 USD
10
0,32 USD
3,25 USD
100
0,20 USD
20,50 USD
1000
0,15 USD
154,00 USD
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