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STH315N10F7-2

STH315N10F7-2
Mfr. #:
STH315N10F7-2
Produttore:
STMicroelectronics
Descrizione:
Darlington Transistors MOSFET POWER MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STH315N10F7-2 Scheda dati
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STH315N10F7-2 maggiori informazioni STH315N10F7-2 Product Details
Attributo del prodotto
Valore attributo
Produttore
STMicroelectronics
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
STRIPFET a canale N
Confezione
Bobina
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
315 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
40 ns
Ora di alzarsi
108 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
180 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3.5 V
Rds-On-Drain-Source-Resistenza
2.3 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
148 ns
Tempo di ritardo all'accensione tipico
62 ns
Qg-Gate-Carica
180 nC
Tags
STH315, STH31, STH3, STH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
***ical
Trans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
***nell
MOSFET, N CH, 100V, 180A, H2PAK-3; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:315W; Transistor Case Style:H2PAK; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)
STH315N10F7 STripFET VII DeepGATE Power MOSFETs
STMicroelectronics STH315N10F7 STripFET™ VII DeepGATE™ Power MOSFETs are AEC-Q101 automotive-qualified N-channel Power MOSFETs that combine best-in-class on-state resistance with low internal capacitances and gate charge, enhancing both conduction and switching efficiency. Available in TO-220 or 2-lead or 6-lead H2PAK industry-standard packages, these devices help designers reduce board size and maximize power density. STH315N10F7 MOSFETs also have high avalanche ruggedness to survive potentially damaging conditions. With a 100V rating, these STripFET VII DeepGATE MOSFETs provide an adequate safety margin to withstand typical over-voltage surges. STH315N10F7 STripFET VII DeepGATE MOSFETs are also well-suited for highly rugged performance in automotive and switching applications.
STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
STripFET™ F7 Power MOSFETs
STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. The STripFET F7 feature high avalanche ruggedness.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descrizione Azione Prezzo
STH315N10F7-2
DISTI # V72:2272_18459496		STMicroelectronicsTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		370
  • 250:$3.3550
  • 100:$3.5400
  • 25:$4.0030
  • 10:$4.0480
  • 1:$4.6449
STH315N10F7-2
DISTI # 497-14718-1-ND		STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1938In Stock
  • 500:$3.8706
  • 100:$4.7800
  • 10:$5.8290
  • 1:$6.5300
STH315N10F7-2
DISTI # 497-14718-6-ND		STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1938In Stock
  • 500:$3.8706
  • 100:$4.7800
  • 10:$5.8290
  • 1:$6.5300
STH315N10F7-2
DISTI # 497-14718-2-ND		STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$3.1693
STH315N10F7-2
DISTI # 31227438		STMicroelectronicsTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		370
  • 250:$3.3550
  • 100:$3.5400
  • 25:$4.0030
  • 10:$4.0480
  • 3:$4.6449
STH315N10F7-2
DISTI # 30613954		STMicroelectronicsTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		64
  • 50:$3.1492
  • 10:$3.7230
  • 4:$6.4005
STH315N10F7-2
DISTI # STH315N10F7-2		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin H2PAK T/R - Tape and Reel (Alt: STH315N10F7-2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.9900
  • 2000:$2.8900
  • 4000:$2.7900
  • 6000:$2.5900
  • 10000:$2.5900
STH315N10F7-2
DISTI # 511-STH315N10F7-2		STMicroelectronicsMOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
RoHS: Compliant		967
  • 1:$5.4500
  • 10:$4.6300
  • 100:$4.0200
  • 250:$3.8100
  • 500:$3.4200
  • 1000:$2.8900
STH315N10F7-2
DISTI # C1S730201165861		STMicroelectronicsMOSFETs
RoHS: Compliant		370
  • 1:$3.3700
STH315N10F7-2
DISTI # C1S730200906207		STMicroelectronicsTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		64
  • 50:$2.4700
  • 10:$2.9200
  • 1:$5.0200
Immagine Parte # Descrizione
STH315N10F7-2

Mfr.#: STH315N10F7-2

OMO.#: OMO-STH315N10F7-2

 MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
STH315N10F7-6

Mfr.#: STH315N10F7-6

OMO.#: OMO-STH315N10F7-6

 MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
STH315N10F7-2

Mfr.#: STH315N10F7-2

OMO.#: OMO-STH315N10F7-2-STMICROELECTRONICS

 Darlington Transistors MOSFET POWER MOSFET
STH315N10F7-6

Mfr.#: STH315N10F7-6

OMO.#: OMO-STH315N10F7-6-STMICROELECTRONICS

 IGBT Transistors MOSFET POWER MOSFET
STH315-YFAA

Mfr.#: STH315-YFAA

OMO.#: OMO-STH315-YFAA-1190

 Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
3500
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Il prezzo attuale di STH315N10F7-2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
3,70 USD
3,70 USD
10
3,52 USD
35,20 USD
100
3,33 USD
333,45 USD
500
3,15 USD
1 574,65 USD
1000
2,96 USD
2 964,00 USD
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