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IPA60R650CEXKSA1

IPA60R650CEXKSA1
Mfr. #:
IPA60R650CEXKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 600V TO-220-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPA60R650CEXKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
IPA60R650CEXKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Tubo
Alias ​​parziali
IPA60R650CE SP001276044
Unità di peso
0.081130 oz
Stile di montaggio
Foro passante
Nome depositato
CoolMOS
Pacchetto-Custodia
TO-220-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
28 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 40 C
Tempo di caduta
11 ns
Ora di alzarsi
8 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
7 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2.5 V
Rds-On-Drain-Source-Resistenza
650 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
58 ns
Tempo di ritardo all'accensione tipico
10 ns
Qg-Gate-Carica
20.5 nC
Modalità canale
Aumento
Tags
IPA60R6, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 0.65 Ohm 20.5 nC CoolMOS™ Power Mosfet - TO-220-3FP
***ical
Trans MOSFET N-CH 600V 9.9A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N-CH, 600V, 9.9A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Parte # Mfg. Descrizione Azione Prezzo
IPA60R650CEXKSA1
DISTI # V99:2348_06384368		Infineon Technologies AGTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220FP Tube36
  • 25000:$0.3827
  • 10000:$0.3899
  • 2500:$0.4000
  • 1000:$0.4240
  • 500:$0.5218
  • 100:$0.5823
  • 10:$0.7231
  • 1:$0.8288
IPA60R650CEXKSA1
DISTI # IPA60R650CEXKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		315In Stock
  • 1000:$0.5038
  • 500:$0.6381
  • 100:$0.8228
  • 10:$1.0410
  • 1:$1.1800
IPA60R650CEXKSA1
DISTI # 26197786		Infineon Technologies AGTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220FP Tube36
  • 15:$0.7216
IPA60R650CEXKSA1
DISTI # IPA60R650CEXKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 7A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPA60R650CEXKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.4389
  • 2000:$0.4239
  • 3000:$0.4079
  • 5000:$0.3939
  • 10000:$0.3869
IPA60R650CEXKSA1
DISTI # 12AC9696		Infineon Technologies AGMOSFET, N-CH, 600V, 9.9A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:9.9A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes435
  • 1:$1.0100
  • 10:$0.8550
  • 100:$0.6570
  • 500:$0.5810
  • 1000:$0.4580
IPA60R650CEXKSA1
DISTI # 726-IPA60R650CEXKSA1		Infineon Technologies AGMOSFET N-Ch 600V 7A TO220FP-3
RoHS: Compliant		2
  • 1:$1.0100
  • 10:$0.8550
  • 100:$0.6570
  • 500:$0.5810
  • 1000:$0.4580
IPA60R650CEXKSA1
DISTI # 1107452		Infineon Technologies AGMOSFET N-CHANNEL 600V 19A COOLMOS TO220, PK250
  • 20:£0.5670
  • 40:£0.5050
  • 200:£0.3880
  • 400:£0.3780
  • 1000:£0.3740
IPA60R650CEXKSA1
DISTI # C1S322000518164		Infineon Technologies AGMOSFETs36
  • 10:$0.7216
IPA60R650CEXKSA1
DISTI # 2709876		Infineon Technologies AGMOSFET, N-CH, 600V, 9.9A, TO-220FP
RoHS: Compliant		435
  • 1:$1.8800
  • 10:$1.6600
  • 100:$1.3200
  • 500:$1.0200
  • 1000:$0.8030
IPA60R650CEXKSA1
DISTI # 2709876		Infineon Technologies AGMOSFET, N-CH, 600V, 9.9A, TO-220FP
RoHS: Compliant		435
  • 5:£0.5670
  • 25:£0.5050
  • 100:£0.3880
  • 250:£0.3780
  • 500:£0.3680
Immagine Parte # Descrizione
IPA60R650CEXKSA1

Mfr.#: IPA60R650CEXKSA1

OMO.#: OMO-IPA60R650CEXKSA1

 MOSFET N-Ch 600V 7A TO220FP-3
IPA60R650CE

Mfr.#: IPA60R650CE

OMO.#: OMO-IPA60R650CE-1190

 MOSFET, N-CH, 600V, 9.9A, TO-220FP
IPA60R650CEXKSA1

Mfr.#: IPA60R650CEXKSA1

OMO.#: OMO-IPA60R650CEXKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V TO-220-3
Disponibilità
Azione:
Available
Su ordine:
2000
Inserisci la quantità:
Il prezzo attuale di IPA60R650CEXKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,57 USD
0,57 USD
10
0,55 USD
5,45 USD
100
0,52 USD
51,66 USD
500
0,49 USD
243,95 USD
1000
0,46 USD
459,20 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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