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IPL65R230C7

IPL65R230C7
Mfr. #:
IPL65R230C7
Produttore:
Infineon Technologies
Descrizione:
RF Bipolar Transistors MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPL65R230C7 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
IPL65R230C7 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
CoolMOS C7
Confezione
Bobina
Alias ​​parziali
IPL65R230C7AUMA1 SP001032728
Stile di montaggio
SMD/SMT
Nome depositato
CoolMOS
Pacchetto-Custodia
VSON-4
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
67 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 40 C
Tempo di caduta
22 ns
Ora di alzarsi
5 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
10 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3 V to 4 V
Rds-On-Drain-Source-Resistenza
230 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
71 ns
Tempo di ritardo all'accensione tipico
8 ns
Qg-Gate-Carica
20 nC
Modalità canale
Aumento
Tags
IPL65R23, IPL65R2, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descrizione Azione Prezzo
IPL65R230C7AUMA1
DISTI # V72:2272_06378016		Infineon Technologies AGTrans MOSFET N-CH 650V 10A 4-Pin VSON EP T/R3000
  • 3000:$1.3041
  • 1000:$1.3157
  • 500:$1.5742
  • 250:$1.8908
  • 100:$2.0108
  • 25:$2.4538
  • 10:$2.4820
  • 1:$2.7368
IPL65R230C7AUMA1
DISTI # IPL65R230C7AUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 10A 4VSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1652In Stock
  • 1000:$1.4450
  • 500:$1.7440
  • 100:$2.2423
  • 10:$2.7900
  • 1:$3.0900
IPL65R230C7AUMA1
DISTI # IPL65R230C7AUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 650V 10A 4VSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1652In Stock
  • 1000:$1.4450
  • 500:$1.7440
  • 100:$2.2423
  • 10:$2.7900
  • 1:$3.0900
IPL65R230C7AUMA1
DISTI # IPL65R230C7AUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 10A 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.3062
IPL65R230C7AUMA1
DISTI # 31601455		Infineon Technologies AGTrans MOSFET N-CH 650V 10A 4-Pin VSON EP T/R3000
  • 3000:$1.3041
  • 1000:$1.3157
  • 500:$1.5742
  • 250:$1.8908
  • 100:$2.0108
  • 25:$2.4538
  • 10:$2.4820
  • 6:$2.7368
IPL65R230C7AUMA1
DISTI # 27158548		Infineon Technologies AGTrans MOSFET N-CH 650V 10A 4-Pin VSON EP T/R3000
  • 3000:$1.3872
IPL65R230C7
DISTI # 31073579		Infineon Technologies AG0400
  • 200:$1.3005
  • 100:$1.4790
  • 50:$1.7468
  • 10:$2.1420
  • 7:$4.1947
IPL65R230C7AUMA1
DISTI # IPL65R230C7AUMA1		Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 10A 4-Pin VSON T/R - Tape and Reel (Alt: IPL65R230C7AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.1900
  • 6000:$1.1900
  • 12000:$1.0900
  • 18000:$1.0900
  • 30000:$1.0900
IPL65R230C7AUMA1
DISTI # 13AC9066		Infineon Technologies AGMOSFET, N-CH, 650V, 10A, VSON-5,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.204ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2179
  • 1000:$1.4500
  • 500:$1.7400
  • 250:$1.9900
  • 100:$2.2400
  • 50:$2.4200
  • 25:$2.6100
  • 10:$2.7900
  • 1:$3.0900
IPL65R230C7AUMA1Infineon Technologies AGPower Field-Effect Transistor, 10A I(D), 650V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		9000
  • 1000:$1.2100
  • 500:$1.2700
  • 100:$1.3300
  • 25:$1.3800
  • 1:$1.4900
IPL65R230C7
DISTI # 726-IPL65R230C7		Infineon Technologies AGMOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7
RoHS: Compliant		1059
  • 1:$2.5200
  • 10:$2.1400
  • 100:$1.7100
  • 500:$1.5000
  • 1000:$1.2400
IPL65R230C7AUMA1
DISTI # 2726064		Infineon Technologies AGMOSFET, N-CH, 650V, 10A, VSON-5
RoHS: Compliant		2179
  • 500:£1.3900
  • 250:£1.5900
  • 100:£1.7800
  • 10:£2.2200
  • 1:£2.7700
IPL65R230C7
DISTI # C1S322000376805		Infineon Technologies AGMOSFETs
RoHS: Compliant		400
  • 200:$1.0200
  • 100:$1.1600
  • 50:$1.3700
  • 10:$1.6800
  • 1:$3.2900
IPL65R230C7AUMA1
DISTI # 2726064		Infineon Technologies AGMOSFET, N-CH, 650V, 10A, VSON-5
RoHS: Compliant		2179
  • 1000:$2.3100
  • 500:$2.7800
  • 100:$3.5800
  • 10:$4.4500
  • 1:$4.9300
Immagine Parte # Descrizione
IPL65R070C7

Mfr.#: IPL65R070C7

OMO.#: OMO-IPL65R070C7

 MOSFET HIGH POWER BEST IN CLASS
IPL65R650C6SATMA1

Mfr.#: IPL65R650C6SATMA1

OMO.#: OMO-IPL65R650C6SATMA1

 MOSFET N-Ch 650V 6.7A ThinPAK 5x6
IPL65C7230

Mfr.#: IPL65C7230

OMO.#: OMO-IPL65C7230-1190

 Nuovo e originale
IPL65R165CFD

Mfr.#: IPL65R165CFD

OMO.#: OMO-IPL65R165CFD-1190

 MOSFET HIGH POWER_LEGACY
IPL65R190E6

Mfr.#: IPL65R190E6

OMO.#: OMO-IPL65R190E6-1190

 Infineon HIGH POWER_LEGACY
IPL65R650C6SATMA1

Mfr.#: IPL65R650C6SATMA1

OMO.#: OMO-IPL65R650C6SATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 8TSON
IPL65R660E6

Mfr.#: IPL65R660E6

OMO.#: OMO-IPL65R660E6-1190

 MOSFET LOW POWER PRICE/PERFORM
IPL65R725CFD

Mfr.#: IPL65R725CFD

OMO.#: OMO-IPL65R725CFD-1190

 Nuovo e originale
IPL65R210CFDAUMA1

Mfr.#: IPL65R210CFDAUMA1

OMO.#: OMO-IPL65R210CFDAUMA1-INFINEON-TECHNOLOGIES

 MOSFET HIGH POWER BEST IN CLASS
IPL65R230C7

Mfr.#: IPL65R230C7

OMO.#: OMO-IPL65R230C7-317

 RF Bipolar Transistors MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7
Disponibilità
Azione:
Available
Su ordine:
3500
Inserisci la quantità:
Il prezzo attuale di IPL65R230C7 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,86 USD
1,86 USD
10
1,77 USD
17,67 USD
100
1,67 USD
167,40 USD
500
1,58 USD
790,50 USD
1000
1,49 USD
1 488,00 USD
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