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IXYP15N65C3D1M

IXYP15N65C3D1M
Mfr. #:
IXYP15N65C3D1M
Produttore:
Littelfuse
Descrizione:
IGBT Transistors 650V/16A XPT IGBT C3 Copacked TO-220
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXYP15N65C3D1M Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYP15N65C3D1M DatasheetIXYP15N65C3D1M Datasheet (P4-P6)
ECAD Model:
Maggiori informazioni:
IXYP15N65C3D1M maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-220-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.96 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
16 A
Pd - Dissipazione di potenza:
48 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
IXYP15N65
Confezione:
Tubo
Corrente continua del collettore Ic Max:
16 A
Marca:
IXYS
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
50
sottocategoria:
IGBT
Nome depositato:
XPT
Unità di peso:
0.211644 oz
Tags
IXYP15, IXYP1, IXYP, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 650V 16A 48W TO-220
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IXYP15N65C3D1M
DISTI # IXYP15N65C3D1M-ND		IXYS CorporationIGBT 650V 16A 48W TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$2.5988
IXYP15N65C3D1M
DISTI # 747-IXYP15N65C3D1M		IXYS CorporationIGBT Transistors 650V/16A XPT IGBT C3 Copacked TO-220
RoHS: Compliant		0
  • 50:$2.4800
  • 100:$2.4400
  • 250:$2.2000
  • 500:$1.7300
  • 1000:$1.6200
  • 2500:$1.5600
Immagine Parte # Descrizione
IXYP15N65C3

Mfr.#: IXYP15N65C3

OMO.#: OMO-IXYP15N65C3

 IGBT Transistors DISC IGBT XPT-GENX3
IXYP15N65C3D1

Mfr.#: IXYP15N65C3D1

OMO.#: OMO-IXYP15N65C3D1

 IGBT Transistors DISC IGBT XPT-GENX3
IXYP15N65C3D1M

Mfr.#: IXYP15N65C3D1M

OMO.#: OMO-IXYP15N65C3D1M

 IGBT Transistors 650V/16A XPT IGBT C3 Copacked TO-220
IXYP15N65C3

Mfr.#: IXYP15N65C3

OMO.#: OMO-IXYP15N65C3-IXYS-CORPORATION

 IGBT 650V 38A 200W TO220
IXYP15N65C3D1

Mfr.#: IXYP15N65C3D1

OMO.#: OMO-IXYP15N65C3D1-IXYS-CORPORATION

 IGBT 650V 38A 200W TO220
IXYP15N65C3D1M

Mfr.#: IXYP15N65C3D1M

OMO.#: OMO-IXYP15N65C3D1M-IXYS-CORPORATION

 IGBT Transistors 650V/16A XPT IGBT C3 Copacked TO-220
Disponibilità
Azione:
Available
Su ordine:
3500
Inserisci la quantità:
Il prezzo attuale di IXYP15N65C3D1M è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
50
2,48 USD
124,00 USD
100
2,44 USD
244,00 USD
250
2,20 USD
550,00 USD
500
1,73 USD
865,00 USD
1000
1,62 USD
1 620,00 USD
2500
1,56 USD
3 900,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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