BSL306NH6327XTSA1

Mfr. #:: BSL306NH6327XTSA1
Produttore:: Infineon Technologies
Descrizione:: IGBT Transistors MOSFET SMALL SIGNAL+P-CH
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSL306NH6327XTSA1 Scheda dati
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Maggiori informazioni:: BSL306NH6327XTSA1 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: FET - Array

Serie: Automotive, AEC-Q101, OptiMOS

Confezione: Nastro e bobina (TR)

Alias parziali: BSL306N H6327 SP001100664

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: SC-74, SOT-457

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: PG-TSOP6-6

Configurazione: Dual

Tipo FET: 2 N-Channel (Dual)

Potenza-Max: 500mW

Tipo a transistor: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 30V

Ingresso-Capacità-Ciss-Vds: 275pF @ 15V

Funzione FET: Logic Level Gate, 4.5V Drive

Corrente-Continuo-Scarico-Id-25°C: 2.3A

Rds-On-Max-Id-Vgs: 57 mOhm @ 2.3A, 10V

Vgs-th-Max-Id: 2V @ 11μA

Gate-Carica-Qg-Vgs: 1.6nC @ 5V

Pd-Power-Dissipazione: 500 mW

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 1.4 ns 1.4 ns

Ora di alzarsi: 2.3 ns 2.3 ns

Vgs-Gate-Source-Voltage: 20 V 20 V

Id-Continuo-Scarico-Corrente: 2.3 A 2.3 A

Vds-Drain-Source-Breakdown-Voltage: 30 V 30 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 1.2 V

Rds-On-Drain-Source-Resistenza: 57 mOhms 57 mOhms

Polarità del transistor: Canale P

Tempo di ritardo allo spegnimento tipico: 8.3 ns 8.3 ns

Tempo di ritardo all'accensione tipico: 4.4 ns 4.4 ns

Qg-Gate-Carica: 1.6 nC 1.6 nC

Modalità canale: Aumento

Tags: BSL306, BSL30, BSL3, BSL

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSL306NH6327XTSA1 Maggiori informazioni

Small Signal Power MOSFETs: Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSL306NH6327XTSA1 DISTI # BSL306NH6327XTSA1TR-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 2.3A 6TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.2239
BSL306NH6327XTSA1 DISTI # BSL306NH6327XTSA1CT-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 2.3A 6TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.2529 500:$0.3273 100:$0.4463 10:$0.5950 1:$0.7100
BSL306NH6327XTSA1 DISTI # BSL306NH6327XTSA1DKR-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 2.3A 6TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.2529 500:$0.3273 100:$0.4463 10:$0.5950 1:$0.7100
BSL306NH6327XTSA1 DISTI # BSL306NH6327XTSA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 2.3A 6-Pin TSOP T/R - Tape and Reel (Alt: BSL306NH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1509 6000:$0.1449 12000:$0.1399 18000:$0.1349 30000:$0.1329
BSL306NH6327XTSA1 DISTI # 34AC1378	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL N-CH, 2.3A, TSOP,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,, RoHS Compliant: Yes	0	1:$0.5800 10:$0.4750 25:$0.4130 50:$0.3510 100:$0.2890 250:$0.2670 500:$0.2460 1000:$0.2240
BSL306NH6327XTSA1 DISTI # 726-BSL306NH6327XTSA	Infineon Technologies AG	MOSFET SMALL SIGNALN CH RoHS: Compliant	0	1:$0.5800 10:$0.4750 100:$0.2890 1000:$0.2240 3000:$0.1910
BSL306NH6327XTSA1 DISTI # 7532790	Infineon Technologies AG	MOSFET DUAL N-CH 30V 2.3A OPTIMOS2 TSOP6, PK	80	10:£0.3300 100:£0.1730 200:£0.1500 400:£0.1350 800:£0.1230
BSL306NH6327XTSA1 DISTI # 2781204	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL N-CH, 2.3A, TSOP RoHS: Compliant	0	5:£0.2760 25:£0.2400 100:£0.1530 250:£0.1380 500:£0.1350
BSL306NH6327XTSA1 DISTI # 2781204	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL N-CH, 2.3A, TSOP RoHS: Compliant	315	5:$0.6490 25:$0.5650 100:$0.4610 250:$0.3890 500:$0.3370 1000:$0.3190 5000:$0.3020

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: BSL306NH6327XTSA1

OMO.#: OMO-BSL306NH6327XTSA1

MOSFET SMALL SIGNALN CH

Mfr.#: BSL306NH6327

OMO.#: OMO-BSL306NH6327-1190

30V,57m��,2.3A,N-Ch Small-Signal MOSFET

Mfr.#: BSL306NH6327XTSA1

OMO.#: OMO-BSL306NH6327XTSA1-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET SMALL SIGNAL+P-CH

Disponibilità

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Su ordine:: 2000
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Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,20 USD~~; ~~0,20 USD~~

10: ~~0,19 USD~~; ~~1,89 USD~~

100: ~~0,18 USD~~; ~~17,94 USD~~

500: ~~0,17 USD~~; ~~84,70 USD~~

1000: ~~0,16 USD~~; ~~159,50 USD~~

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BSL306 7
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BSL 200

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BSL306NH6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes