FDP3652

FDP3652
Mfr. #:
FDP3652
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 100V 61a 0.016 Ohm
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDP3652 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
61 A
Rds On - Resistenza Drain-Source:
14 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
150 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FDP3652
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Tempo di caduta:
45 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
85 ns
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
26 ns
Tempo di ritardo di accensione tipico:
12 ns
Parte # Alias:
FDP3652_NL
Unità di peso:
0.063493 oz
Tags
FDP3652, FDP365, FDP36, FDP3, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 100V 9A Automotive 3-Pin(3+Tab) TO-220AB Tube
***p One Stop Global
Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 100 V 16 mO PowerTrench Mosfet - TO-220AB
***Semiconductor
N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ
***inecomponents.com
TO-220AB, SINGLE, N-CH, 100V, 16MOHM PWR ULTRAFET TRENCH MOS
***Components
MOSFET N-CHANNEL 100V 9A TO220AB
*** Source Electronics
MOSFET N-CH 100V 61A TO-220AB
***eco
FDP3652.,3 LD PLASTIC W/EXPOSE D HEATSNK <AZ
***ser
MOSFETs 100V, 61a, 0.016 Ohm
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.014Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:150W; No. Of Pins:3Pins Rohs Compliant: Yes
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:61A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Avalanche Single Pulse Energy Eas:182mJ; Current, Idm Pulse:70A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation:150W; Power, Pd:150W; Power, Ptot:150W; Resistance, Rds on @ Vgs = 10V:0.014ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, trr Typ:62ns; Transistors, No. of:1; Typ Capacitance Ciss:2880pF; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:182mJ; Capacitance Ciss Typ:2880pF; Current Id Max:61A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:14mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation Ptot Max:150W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:62ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Parte # Mfg. Descrizione Azione Prezzo
FDP3652
DISTI # V36:1790_06359472
ON SemiconductorFET 100V 16.0 MOHM TO22012113
  • 5000:$0.7903
  • 2500:$0.7990
  • 1000:$0.8540
  • 500:$1.0174
  • 100:$1.1278
  • 10:$1.4022
  • 1:$1.6158
FDP3652
DISTI # V79:2366_18816080
ON SemiconductorFET 100V 16.0 MOHM TO220222
  • 5000:$0.7903
  • 2500:$0.7990
  • 1000:$0.8540
  • 500:$1.0174
  • 100:$1.1278
  • 10:$1.4022
  • 1:$1.6158
FDP3652
DISTI # FDP3652-ND
ON SemiconductorMOSFET N-CH 100V 61A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Bulk
30In Stock
  • 1000:$1.2530
  • 500:$1.5123
  • 100:$1.9444
  • 10:$2.4200
  • 1:$2.6800
FDP3652
DISTI # 26163598
ON SemiconductorFET 100V 16.0 MOHM TO22012113
  • 5000:$0.7903
  • 2500:$0.7990
  • 1000:$0.8540
  • 500:$1.0174
  • 100:$1.1278
  • 10:$1.4022
  • 8:$1.6158
FDP3652
DISTI # 26122911
ON SemiconductorFET 100V 16.0 MOHM TO220222
  • 5000:$0.7903
  • 2500:$0.7990
  • 1000:$0.8540
  • 500:$1.0174
  • 100:$1.1278
  • 15:$1.4022
FDP3652
DISTI # 30702593
ON SemiconductorFET 100V 16.0 MOHM TO22032
  • 16:$0.6217
FDP3652
DISTI # FDP3652
ON SemiconductorTrans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP3652)
RoHS: Compliant
Min Qty: 288
Container: Bulk
Americas - 0
  • 288:$0.8099
  • 290:$0.8049
  • 578:$0.7939
  • 1440:$0.7839
  • 2880:$0.7649
FDP3652
DISTI # FDP3652
ON SemiconductorTrans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP3652)
RoHS: Compliant
Min Qty: 800
Asia - 0
  • 800:$1.3662
  • 1600:$1.3136
  • 2400:$1.2650
  • 4000:$1.2198
  • 8000:$1.1778
  • 20000:$1.1385
  • 40000:$1.1198
FDP3652
DISTI # FDP3652
ON SemiconductorTrans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP3652)
RoHS: Compliant
Min Qty: 800
Container: Tube
Americas - 0
  • 800:$1.0067
  • 1600:$1.0001
  • 3200:$0.9873
  • 4800:$0.9748
  • 8000:$0.9507
FDP3652
DISTI # FDP3652
ON SemiconductorTrans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP3652)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€0.9299
  • 10:€0.8269
  • 25:€0.7439
  • 50:€0.6759
  • 100:€0.6199
  • 500:€0.5719
FDP3652.
DISTI # 15AC2932
Fairchild Semiconductor CorporationTransistor Polarity:N Channel,Continuous Drain Current Id:61A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:150W,No. of Pins:3Pins RoHS Compliant: Yes12
  • 8000:$0.9500
  • 4800:$0.9740
  • 3200:$0.9870
  • 1600:$1.0000
  • 1:$1.0100
FDP3652
DISTI # 512-FDP3652
ON SemiconductorMOSFET 100V 61a 0.016 Ohm
RoHS: Compliant
7
  • 1:$2.3100
  • 10:$1.9600
  • 100:$1.5700
  • 500:$1.3700
  • 1000:$1.1300
FDP3652_Q
DISTI # 512-FDP3652_Q
ON SemiconductorMOSFET 100V 61a 0.016 Ohm
RoHS: Not compliant
0
    FDP3652Fairchild Semiconductor CorporationPower Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    2464
    • 1000:$1.1300
    • 500:$1.1900
    • 100:$1.2400
    • 25:$1.2900
    • 1:$1.3900
    FDP3652Fairchild Semiconductor CorporationPower Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    Europe - 624
      FDP3652
      DISTI # 1017692
      ON SemiconductorMOSFET, N, TO-220
      RoHS: Compliant
      0
      • 500:$1.5800
      • 100:$1.8100
      • 10:$2.2600
      • 1:$2.6500
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      Disponibilità
      Azione:
      752
      Su ordine:
      2735
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