SiHH26N60E, SiHH21N60E, SiHH14N60E, and SiHH11N60E

By Vishay/Siliconix 57

SiHH26N60E, SiHH21N60E, SiHH14N60E, and SiHH11N60E

Vishay's construction of the 600 V E series MOSFETs in the PowerPAK 8 mm x 8 mm package allows one of the source pins to be arranged as a dedicated Kelvin source connection that separates the gate-drive return path from the main current-carrying source terminals.  This prevents the L x di/dt voltage drop in the high-current path from reducing the gate-drive voltage that is applied to the E series MOSFETs.  This leads to faster switching and more noise immunity in power supply designs for telecom, server, computing, lighting, and industrial applications.

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Features
  • Offered in space-saving, surface-mount PowerPAK 8 mm x 8 mm package
  • All feature large drain terminals for low thermal resistance and Kelvin source connections that can increase efficiency by improving gate drive signal
  • RoHS-compliant, halogen-free, and 100% lead (Pb)-free
  • Space-saving alternative to conventional TO-220 and TO-263 solutions with similar thermals as TO-263 (D2PAK)
  • Low on-resistance and gate charge reduce conduction and switching losses to save energy
  • Withstand high energy pulses in the avalanche and commutation modes with guaranteed limits through 100 % UIS testing
Application    
  • Power factor correction
  • Flyback converters
  • Two-switch forward converters for server and telecom power supplies
  • HID and fluorescent ballast lighting
  • Consumer and computing power adaptors
  • Motor drives
  • Solar PV inverters
  • Induction heating
  • Welding equipment

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