By Vishay/Siliconix 101
The on-resistance of the Vishay Siliconix Si8824EDB is up to 25% lower than the closest competing 20 V MOSFET in an identical CSP package, and up to 65% lower than the closest competing 20 V device in the DFN 1 mm by 0.6 mm package. The MOSFET’s low on-resistance, threshold voltage, rating down to 1.2 V, and ±5 V VGS provide a combination of safety margin, gate drive design flexibility, and high performance for lithium ion battery-powered applications.
The Si8824EDB offers an extremely low on-resistance per area of 40 mΩ mm2, 28% lower than the closest competing 20 V MOSFET in the DFN 1 mm2 package, to save space and reduce battery power consumption in mobile applications. The device’s low on-resistance means a very low voltage drop at DC and pulse peak currents, so less power is wasted as heat.
Diagrams for Typical Applications:
Load switching from sub-logic level | Pairing with PMIC to manage multiple loads | |
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Features | Applications | |
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