Si8824EDB N-Ch Chipscale MOSFET

By Vishay/Siliconix 101

Si8824EDB N-Ch Chipscale MOSFET

The on-resistance of the Vishay Siliconix Si8824EDB is up to 25% lower than the closest competing 20 V MOSFET in an identical CSP package, and up to 65% lower than the closest competing 20 V device in the DFN 1 mm by 0.6 mm package.  The MOSFET’s low on-resistance, threshold voltage, rating down to 1.2 V, and ±5 V VGS provide a combination of safety margin, gate drive design flexibility, and high performance for lithium ion battery-powered applications.

The Si8824EDB offers an extremely low on-resistance per area of 40 mΩ mm2, 28% lower than the closest competing 20 V MOSFET in the DFN 1 mm2 package, to save space and reduce battery power consumption in mobile applications. The device’s low on-resistance means a very low voltage drop at DC and pulse peak currents, so less power is wasted as heat.

Diagrams for Typical Applications:

Load switching from sub-logic level Pairing with PMIC to manage multiple loads






Features Applications
  • TrenchFET® power MOSFET
  • Ultra-small 0.8 mm x 0.8 mm outline
  • Ultra-thin 0.357 mm height
  • Typical ESD protection 2000 V (HBM)
  • Ultraportable and wearable devices
  • Load switch with low voltage drop
  • Load switch for 1.2 V, 1.5 V, and 1.8 V power lines
  • Small signal and high speed switching

Nuovi Prodotti:

SI8824EDB-T2-E1

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